| Allicdata Part #: | IPP200N25N3GXKSA1-ND |
| Manufacturer Part#: |
IPP200N25N3GXKSA1 |
| Price: | $ 5.41 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 250V 64A TO220-3 |
| More Detail: | N-Channel 250V 64A (Tc) 300W (Tc) Through Hole PG-... |
| DataSheet: |  IPP200N25N3GXKSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 4.92030 |
| 10 +: | $ 4.42638 |
| 100 +: | $ 3.63964 |
| 500 +: | $ 3.04944 |
| 1000 +: | $ 2.65596 |
| Vgs(th) (Max) @ Id: | 4V @ 270µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | PG-TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 7100pF @ 100V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 86nC @ 10V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 20 mOhm @ 64A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 64A (Tc) |
| Drain to Source Voltage (Vdss): | 250V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IPP200N25N3GXKSA1 is a 600V, 200A N-channel enhancement-mode MOSFET. It is a part of a family of devices developed for use in power electronics applications.
Application Field
This device is widely used for power switching applications with dc-dc converters, motor drivers, freewheeling diodes, and high current AC inverters. It has been designed to have both high current capability, low on-state resistance, and fast switching.
The device is suitable for galvanically isolated Class A, B and C operation, as well as ZVS, ZCS and ZVS plus ZCS operation. It is designed to handle high voltage output stages, power supply regulation and switching, and other power related circuits.
Working Principle
The working principle of the IPP200N25N3GXKSA1 is based on the transfer of electrical current through a channel of electrons between two metal electrodes, known as a Gate and a Source. The gate is the controlling electrode, it receives the electrical stimulus that turns the MOSFET on or off. The source supplies the electrical current, the flow of which is controlled by the Gate through changes in the electric field across the channel that the electrons flow through.
In the off state, the electric field between the gate and the source is at peak inverse voltage and the majority charge carriers, electrons cannot pass through. In the on state, the electric field decreases and allows the majority charge carriers to flow through the channel. This makes the IPP200N25N3GXKSA1 highly efficient and fast, enabling it to be used in high current applications.
Furthermore, the IPP200N25N3GXKSA1 offers several advantages: wide device portfolio, relatively low on-state resistance, low power dissipation, high current capability, and fast switching.
Conclusion
The IPP200N25N3GXKSA1 is a 600V, 200A N-Channel Enhancement-Mode MOSFET, ideal for applications related to power switching with dc-dc converters, motor drivers, freewheeling diodes, and high current AC inverters. It has a relatively low on-state resistance, energy efficient, high current capability, and fast switching.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| IPP220N25NFDAKSA1 | Infineon Tec... | 5.45 $ | 429 | MOSFET N-CH 250V 61A TO22... |
| IPP22N03S4L15AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 22A TO220... |
| IPP230N06L3 G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 30A TO220... |
| IPP260N06N3GXKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 27A TO220... |
| IPP200N15N3GXKSA1 | Infineon Tec... | 2.3 $ | 1000 | MOSFET N-CH 150V 50A TO22... |
| IPP200N25N3GXKSA1 | Infineon Tec... | 5.41 $ | 1000 | MOSFET N-CH 250V 64A TO22... |
| IPP200N15N3GHKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 150V 50A TO22... |
| IPP21N03L G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH TO-220N-Chann... |
| IPP25N06S325XK | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 25A TO-22... |
| IPP25N06S3L-22 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 25A TO-22... |
| IPP26CN10NGHKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 35A TO-2... |
| IPP26CNE8N G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 85V 35A TO-22... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...