IPP200N15N3GXKSA1

The IPP200N15N3GXKSA1 is a field effect transistor (FET) designed as a N-channel 150 V, 40 - Id, 3 - Ohm MOSFET with a 27 A, single diode reverse recovery. It is mainly used in applications such as motor drive, HVAC, contracted drives, and AC drives. This article will explain the working principle and its application field.

The working principle of the IPP200N15N3GXKSA1 is based on the principle of operation of a field effect transistor. A field effect transistor is a type of conducting device that consists of an insulated-gate field-effect transistor (IGFET) and a source of electric potential. The electric potential at the gate of the FET determines the amount of current flowing through it. When the gate electric potential is raised, the current flow through the FET increases. Conversely, when the gate electric potential is lowered, the current flow through the FET decreases. Thus, the operation of a FET is based on the electric potential of the gate controlling the flow of current.

The IPP200N15N3GXKSA1 has a source-drain voltage rating of 150V which makes it suitable for applications that require high voltage. Its single diode reverse recovery feature allows it to rapidly recover the source voltage during reverse transitions. Additionally, its 40A Id max rating allows it to deliver high current when needed. It also has a maximum on-state resistance of 3 ohms which ensures efficient current flow.

The IPP200N15N3GXKSA1 is mainly used in motor drive, HVAC, contracted drives, and AC drives applications. In motor drive applications, it is used to control the speed as well as directional control of motors. In HVAC applications, it is used to control the speed of fans and blowers. In contractors drives applications, the IPP200N15N3GXKSA1 is used to control the torque and speed of motors. In AC drives applications, it is used to regulate the AC voltage and current levels.

In conclusion, the IPP200N15N3GXKSA1 is a N-channel 150 V, 40 - Id, 3 - Ohm MOSFET with a 27 A, single diode reverse recovery and is mainly used in motor drive, HVAC, contracted drives, and AC drives applications. Its working principle is based on the principle of operation of a field effect transistor and its single diode reverse recovery feature allows it to rapidly recover the source voltage during reverse transitions. Thanks to its 40A Id max rating and maximum on-state resistance of 3 ohms, the IPP200N15N3GXKSA1 is a reliable and efficient FET.