Allicdata Part #: | IPP230N06L3G-ND |
Manufacturer Part#: |
IPP230N06L3 G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 30A TO220-3 |
More Detail: | N-Channel 60V 30A (Tc) 36W (Tc) Through Hole PG-TO... |
DataSheet: | IPP230N06L3 G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.2V @ 11µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 36W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 4.5V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 23 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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Introduction on IPP230N06L3 G
IPP230N06L3 G is a member of Fairchild Semiconductor’s PowerTrench® MOSFET family. It is a 30V N-Channel enhancement-mode power transistor which has a high current handling capacity, low threshold, and fast switching speed. It is suitable for use in a wide range of switching, linear motor control, and battery powered applications such as: motor position units, audio amplifiers, power supplies, DC-to-DC converters and automotives.
Application Field
Because of the superior features of IPP230N06L3 G, it can be used in many types of applications. This power MOSFET offers low on-state resistance, low gate charge, low input and reverse leakage current, fast switching, improved dv/dt capability, and superior avalanche capability. It also has a higher current carrying capacity and improved thermal stability.
IPP230N06L3 G is mainly used in switching power supply applications such as DC-DC converters, audio amplifiers, and other power supply circuits. It is also used in automotive applications such as fuel injectors, radio suppressors, and ignition systems. It is also used in industrial applications such as linear motor control, PWM motor controls, and motor braking.
Working Principle
The IPP230N06L3 G power MOSFET utilizes an enhancement-mode design which uses voltage applied to its gate to control the current flow between its source and drain. When the gate is held at a positive voltage, current flows freely between the source and drain. When the gate voltage is taken to a negative voltage, the current flow is blocked. This power MOSFET utilizes a depletion-mode structure, by which an additional positive voltage applied to the gate is necessary to open up the current flow between the source and drain.
The IPP230N06L3 G is an enhancement-mode power MOSFET with a nominal 30V VGS rating. The on-state resistance (RDS(on)) is low compared to ordinary power MOSFETs, and it offers superior switching performance. It has a low gate capacitance, which makes it well suited for pulse-width modulated (PWM) applications such as motor speed control.
The IPP230N06L3 G also features fast turn-off and fast turn-on times which makes it well suited for switching power supplies and other high efficiency applications. It also has a low gate charge and can handle higher voltage transients, making it well suited for use in DC-to-DC converters. The integrated charge pump circuitry reduces the gate voltage required for dynamic operation. This power MOSFET is also designed for enhanced protection against ESD.
In summary, the IPP230N06L3 G from Fairchild Semiconductor is a 30V N-Channel enhancement-mode power transistor which has a high current handling capacity, low threshold, fast switching speed and superior performance. It is suitable for use in many switching, linear motor control, and battery powered applications. Its fast turn-on and turn-off time make it suitable for use in high efficiency switching power supplies and DC-to-DC converters.
The specific data is subject to PDF, and the above content is for reference
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