IPP21N03L G

Series:	--
Packaging:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C:	--
Rds On (Max) @ Id, Vgs:	--
Vgs(th) (Max) @ Id:	--
FET Feature:	--
Power Dissipation (Max):	--
Operating Temperature:	--
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO-220-3
Package / Case:	TO-220-3

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The IPP21N03L G is a small signal logic level N-channel enhancement mode MOSFET. It has been designed to minimize the on-state resistance while providing rugged, reliable and fast switching performance. Many applications use this type of MOSFET because it is economical, small, and fast.

Applications of IPP21N03L G

The MOSFET offers various applications due to their robust design and low on-state resistance. It provides efficient switching in DC-DC converters, power MOSFETs, switching power supplies, and for load circuitry for high-speed processing systems. It is suitable for use in many applications such as general-purpose switching, switching regulators, pulse power supplies, and as a DC-DC converter. It is also used in motor control systems and DC-DC converters.

Working Principle of IPP21N03L G

The IPP21N03L G series MOSFET works on the principle of the depletion and thick oxide layer. It has four terminals, the drain, source and gate terminals. The drain and source are connected to the power supply, while the gate is connected to an electronic signal that controls the on/off state of the MOSFET. When the gate voltage is applied, it creates an electric field in between the gate region and the channel. The field attracts electrons from the gate region to the channel region, thus resulting in a depletion region between them. This depletion region makes the channel resistance to go high, thus blocking the flow between the source and drain. When the gate is reversed, the depletion region is eliminated, resulting in a low resistance channel region, thus allowing the flow from the source to drain.

Advantages of IPP21N03L G

The most significant advantage of these MOSFETs is its logic level operation, which means it only needs a small voltage gate signal to switch on. This results in low power losses, low heat generation, and low capacitance, which can be useful in many instances. Because the gate voltage is low, it consumes less power compared to other types of MOSFETs, while providing higher output current and better reliability. Its low on-state resistance, low gate capacitance and low power losses make it ideal for use in many high-speed switching applications. Additionally, it has excellent ruggedness and reliability with a low input threshold voltage. These features make the IPP21N03L G an ideal choice for high-speed switching applications.

Limitations of IPP21N03L G

A few limitations of the IPP21N03L G include its linear power dissipation, which limits its use in higher power applications. Another limitation is the limited package options available for the series, which can make choosing the right type for a particular application difficult. Lastly, its maximum drain current is limited to only 8A, making it less suitable for applications that require a higher current.

Conclusion

The IPP21N03L G series MOSFETs is an ideal choice for many low-power, high-speed applications. It has low on-state resistance, low power losses, low input threshold voltage and low gate capacitance, making it ideal for high-speed switching. Additionally, its logic level operation makes it a great choice for many logic level applications. However, it has a few drawbacks, so one must carefully consider their application before settling with this type of MOSFET.

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