
Allicdata Part #: | IPP26CNE8NG-ND |
Manufacturer Part#: |
IPP26CNE8N G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 85V 35A TO-220 |
More Detail: | N-Channel 85V 35A (Tc) 71W (Tc) Through Hole PG-TO... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 39µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 71W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2070pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 26 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drain to Source Voltage (Vdss): | 85V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IPP26CNE8N G is a high-performance N-Channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed with an Improved Fast Switching Technology. It provides an excellent balance of low On-Resistance, high maximum junction temperature, and drivability.
The IPP26CNE8N G is suitable for a wide range of applications, including high-frequency switching, high-voltage power switching, low-distortion audio, and Switch-Mode Power Supply (SMPS) control. It has a Gate-Threshold voltage of 4V (Vth) and a high-temperature power rating of -55ºC to 150ºC, making it suitable for a variety of applications including industrial robotics, automotive, and home appliance control.
The IPP26CNE8N G is primarily employed to regulate voltage or current in an electrical circuit. It does so by controlling the flow of current between the gate terminal and the drain terminal. When a small voltage is applied to the gate terminal, a strong electrical field allows current to flow freely between the drain terminal and the source terminal. When the voltage on the gate terminal is reduced, the electrical field is weakened, which reduces the flow of current through the MOSFET.
The IPP26CNE8N G can be used with many different types of circuits. It can be used as a voltage regulator to control the voltage supplied to a circuit, a current limiter to limit the current the circuit can draw, and an amplifier to boost the signals that are sent to the circuit. It can also be used in logic circuits as a signal switch. The IPP26CNE8N G has a low On-Resistance, which makes it suitable for use as an amplifier or a signal switch.
To increase the efficiency and reduce the power loss of an electronic device, the IPP26CNE8N G can be used in combination with other components to create a power supply or a power conversion system. For example, it can be used in combination with an inductor and a capacitor to create a DC/DC converter. The MOSFET acts as a switch and regulates the amount of current flowing through the inductor. This allows the converter to act as a Voltage regulator and limit the amount of voltage present in the circuit.
With its high-temperature power rating, the IPP26CNE8N G is well-suited for use in automotive, robotics, and industrial control applications. Its performance characteristics allow it to be used in any environment where temperature, reliability, and performance are important considerations. The IPP26CNE8N G is an excellent choice for use in a variety of circuit applications and is a great way to boost the performance of your electronic devices and applications.
The specific data is subject to PDF, and the above content is for reference
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