IPP50R190CEXKSA1 Allicdata Electronics
Allicdata Part #:

IPP50R190CEXKSA1-ND

Manufacturer Part#:

IPP50R190CEXKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 500V 18.5A PG-TO-220
More Detail: N-Channel 500V 18.5A (Tc) 127W (Tc) Through Hole P...
DataSheet: IPP50R190CEXKSA1 datasheetIPP50R190CEXKSA1 Datasheet/PDF
Quantity: 1570
Stock 1570Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 510µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 127W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1137pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 47.2nC @ 10V
Series: CoolMOS™ CE
Rds On (Max) @ Id, Vgs: 190 mOhm @ 6.2A, 13V
Drive Voltage (Max Rds On, Min Rds On): 13V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IPP50R190CEXKSA1 is a N-channel Enhancement Mode Power MOSFET with a voltage rating of 190 volts. This type of transistor is a field-effect transistor, or FET, and is specifically a metal-oxide-semiconductor field-effect transistor, or MOSFET. It is considered a single MOSFET and is most commonly used in power management applications such as DC/DC converters and load switches.

The IPP50R190CEXKSA1 acts as a gate between a voltage source and a load, such as a battery. The MOSFET allows current to flow through the transistor by conducting itself like a switch. The transistor switches on when a voltage is applied to the gate terminal and then it switches off when no voltage is applied. This type of transistor provides very low ON-resistance in order to enable the efficient switching of the load. In addition, it has an operating temperature range between -55°C and +125°C, making it suitable for a wide range of applications.

The working principle of the IPP50R190CEXKSA1 is based on the effect of a MOS capacitor. This type of capacitor is composed of two gate terminals, the source and the drain. The source is the input and the drain is the output. The input terminal is connected to the gate voltage, while the output terminal is grounded. When a voltage is applied to the gate, the voltage creates an electric field which attracts electrons from the drain to the source, effectively creating a current pathway between the source and the drain. This process is known as “channel formation” and is the basis of MOSFET switching.

The IPP50R190CEXKSA1 is well-suited for a variety of applications such as DC/DC converters, load switches, power supplies and motor controls. It can also be used in data processing mode to control complex digital circuits. The device is specifically designed for high-efficiency switching, which makes it especially useful for applications with high power consumption. It is also capable of very high switching speeds, making it ideal for high-speed operations.

The IPP50R190CEXKSA1 is an excellent choice for a variety of power management and data processing applications. It offers low ON-resistance, a wide temperature range, and high switching speeds. This makes it an ideal choice for applications such as DC/DC converters, load switches, power supplies, motor controls, and data processing. It is a very reliable, durable, and cost-effective solution for many different applications.

The specific data is subject to PDF, and the above content is for reference

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