IPP50R350CPHKSA1 Allicdata Electronics
Allicdata Part #:

IPP50R350CPHKSA1-ND

Manufacturer Part#:

IPP50R350CPHKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 500V 10A TO220-3
More Detail: N-Channel 500V 10A (Tc) 89W (Tc) Through Hole PG-T...
DataSheet: IPP50R350CPHKSA1 datasheetIPP50R350CPHKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 370µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 89W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IPP50R350CPHKSA1 is a power metal-oxide-semiconductor field-effect transistor (MOSFET) with an integrated driver. This single MOSFET can switch more than 50 volts in a low-power environment and has an integrated driver that reduces board space and cost. It features low gate charge, low capacitance and fast switching.

The IPP50R350CPHKSA1 is ideally suited for a variety of applications including motor control, high-temperature, harsh-environment, solid-state relay and lighting, portable electronics, and laser diode and switch applications. It can also be used for wireless PA, power management and industrial, automotive, and avionics applications.

The IPP50R350CPHKSA1 is based on a vertical MOSFET structure which is integrated into a full bridge package. This integrated package allows the MOSFET to operate at switch frequencies up to 20MHz. The integrated driver supports both PWM and logic-level control, and the MOSFET can be configured for either a synchronous rectified or a non-synchronous rectified configuration.

The working principle of the IPP50R350CPHKSA1 is based on the principles of both the MOSFET and the integrated driver. The MOSFET consists of a source, a drain and a gate electrode. When a positive voltage is applied to the gate electrode, a current will flow between the source and the drain. The integrated driver then acts as a switch to control the current flow in the MOSFET. The driver can either turn the MOSFET on or off, and can reduce power consumption by operating at lower voltages. Additionally, the integrated driver provides thermal and current protection, eliminating the need for external components.

In summary, the IPP50R350CPHKSA1 is a power MOSFET integrated with an integrated driver. This single MOSFET can switch more than 50 volts in a low-power environment and has an integrated driver that reduces board space and cost. It is suitable for a variety of demanding applications including motor control, high-temperature, harsh-environment, solid-state relay and lighting, portable electronics, and laser diode and switch applications. Its working principle is based on the principles of both the MOSFET and the integrated driver.

The specific data is subject to PDF, and the above content is for reference

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