IPP50R380CEXKSA1 Allicdata Electronics
Allicdata Part #:

IPP50R380CEXKSA1-ND

Manufacturer Part#:

IPP50R380CEXKSA1

Price: $ 0.88
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N CH 500V 9.9A PGTO220
More Detail: N-Channel 500V 9.9A (Tc) 73W (Tc) Through Hole PG-...
DataSheet: IPP50R380CEXKSA1 datasheetIPP50R380CEXKSA1 Datasheet/PDF
Quantity: 999
1 +: $ 0.80010
10 +: $ 0.70749
100 +: $ 0.55894
500 +: $ 0.43348
1000 +: $ 0.34222
Stock 999Can Ship Immediately
$ 0.88
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 73W (Tc)
FET Feature: Super Junction
Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 24.8nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.2A, 13V
Drive Voltage (Max Rds On, Min Rds On): 13V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IPP50R380CEXKSA1 is a N-Channel lateral MOSFET that was designed to handle high power switching applications. It is designed to easily interface with a PWM controller to reduce switching losses. The IPP50R380CEXKSA1 has a high on-resistance rating and is suitable for many high power switching applications, including solar inverters, motor drives, and power supplies. This article will discuss the application fields and working principles of the IPP50R380CEXKSA1.

Application Fields of IPP50R380CEXKSA1

The IPP50R380CEXKSA1 is a versatile device and can be used in a variety of applications where current and or voltage need to be switched. The limited on-resistance makes it suitable for high power applications. It is ideal for switching power from one device to another, or for using as a very low resistance switch in high power devices such as solar inverters, motor drives, and HID lighting systems.

The IPP50R380CEXKSA1 can also be used in power conversion systems, providing an extremely low resistance path to quickly and efficiently convert energy. It is also often used in battery management systems to enable current or voltage switching in order to achieve the most effective and efficient power use. Additionally, the IPP50R380CEXKSA1 can be used in DC-DC converters, allowing greater efficiency and lower losses than more traditional switching methods such as optocouplers.

Working Principle of IPP50R380CEXKSA1

The IPP50R380CEXKSA1 is a lateral N-channel MOSFET based on a boundary field effect. This type of MOSFET is used to control current or voltage between two points. It has a low on-resistance and is capable of switching high-power signals. When the device is turned on, the N-channel conducting material creates a low voltage drop between the source and the drain. This allows current to flow freely from one point to the other without significant losses.

When the device is off, the gate voltage reduces the N-channel conducting material and creates a barrier between the source and the drain. This effectively cuts off the current flow between the two points. The IPP50R380CEXKSA1 can be controlled by a PWM controller, which controls the voltage applied to the gate of the device and hence the switching speed of the device.

Conclusion

The IPP50R380CEXKSA1 is a powerful N-Channel lateral MOSFET designed to handle high power switching applications. It has a high on-resistance level, making it suitable for a wide range of applications, including switching power from one device to another and power conversion systems. The IPP50R380CEXKSA1 can be controlled and turned on and off using a PWM controller. This article explored the application fields and working principles of this device.

The specific data is subject to PDF, and the above content is for reference

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