IPP50R250CPHKSA1

Vgs(th) (Max) @ Id:	3.5V @ 520µA
Package / Case:	TO-220-3
Supplier Device Package:	PG-TO220-3-1
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	114W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1420pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	36nC @ 10V
Series:	CoolMOS™
Rds On (Max) @ Id, Vgs:	250 mOhm @ 7.8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	13A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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< p >The IPP50R250CPHKSA1 transistor is a single field-effect transistor (FET) available in a plastic surface-mount package. Used for applications such as low-noise amplifier and power amplifier stages, the IPP50R250CPHKSA1 provides high performance in both low- and high-frequency applications. The IPP50R250CPHKSA1 is a high-energy, low-power transistor ideal for high frequency and high speed switching applications.< /p > < p >The IPP50R250CPHKSA1 transistor is a depletion-mode device, meaning that the output current is reduced when the gate-to-source voltage is increased. The source and the drain of the transistor are connected via two ohmic contacts. A gate electrode is connected to the central part of the transistor, and its capacitance depends on the gate voltage. As the gate voltage increases, the capacitance between the gate and the central section increases and so does the drain current. Due to this sensitivity of the gate voltage, the IPP50R250CPHKSA1 can be used for pulsed power application.< /p > < p >The IPP50R250CPHKSA1 is a high-performance single FET designed to be used in low-noise applications like amplifiers, multistage switching systems, and other circuits. It offers low noise, low gate capacitance, and high breakdown voltage. The transistor also exhibits low power consumption and low drain-source on-state resistance (RDS(ON)). The IPP50R250CPHKSA1 has excellent thermal stability with a multi-layer progressive construction that helps to ensure consistent performance even under extreme conditions. Its low-capacitance design also makes the IPP50R250CPHKSA1 ideal for high-speed signal switching.< /p > < p >The low-noise performance of the IPP50R250CPHKSA1 is enabled by its low input capacitance, low-gate leakage current, and high max drain-source voltage (VDS). The transistor’s low-capacitance design also helps to minimize signal distortion and improve the overall dynamic range of the circuit. Furthermore, the IPP50R250CPHKSA1 has a low gate-source voltage (VGS) and high RDS(ON), which ensures that the resulting power loss is minimized, especially in high-frequency circuits.< /p > < p >One of the primary applications of the IPP50R250CPHKSA1 is in low-noise amplifier stages. Thanks to its low input capacitance and low-gate leakage current, the IPP50R250CPHKSA1 can match the amplified signal with minimal distortion. Additionally, its low-capacitance design makes it ideal for high-frequency operations. The transistor also has a high RDS(ON) which allows for better circuit efficiency. Furthermore, the high VDS makes the IPP50R250CPHKSA1 ideal for high output power applications.< /p > < p >In conclusion, the IPP50R250CPHKSA1 is a single FET designed for low-noise applications. Thanks to its low input capacitance, low-gate leakage current, and high max VDS, the IPP50R250CPHKSA1 provides excellent performance in both low- and high-frequency applications. Furthermore, its low-capacitance design and high RDS(ON) ensure that the resulting power loss is minimized, making it ideal for use in power amplifier stages and other pulsed-power applications. As such, the IPP50R250CPHKSA1 is an excellent choice for noise-sensitive applications, such as low-noise amplifiers, audio equipment, and medical electronic systems. < /p >

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