IPP50R350CPXKSA1 Allicdata Electronics
Allicdata Part #:

IPP50R350CPXKSA1-ND

Manufacturer Part#:

IPP50R350CPXKSA1

Price: $ 0.93
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 550V 10A TO220-3
More Detail: N-Channel 550V 10A (Tc) 89W (Tc) Through Hole PG-T...
DataSheet: IPP50R350CPXKSA1 datasheetIPP50R350CPXKSA1 Datasheet/PDF
Quantity: 1000
500 +: $ 0.83896
Stock 1000Can Ship Immediately
$ 0.93
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 370µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 89W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 550V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tube 
Description

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The IPP50R350CPXKSA1 transistor is a single n-channel enhancement-mode MOSFET with a low-resistance package, designed for use in telecommunication, automotive and Logic Power and Switch applications. It has an industry-standard footprint and comes in a wide selection of packages, including SMD, leaded, and specialized IC packages. The device features low On-Resistance and fast switching speed, making it ideal for power switching and switching applications.

Applications

  • Telecommunication systems
  • Automobile applications
  • Logic Power and Switch applications
  • Power supplies
  • Motor control
  • Voltage-mode power conversion

Working Principle

The working principle of the IPP50R350CPXKSA1 is based on a single transistor and a drain-source resistance between the drain and the source. In the simplest wake of its operation, the transistor can be thought of as having two inputs and one output. When a voltage is applied to the gate and drain nodes, the MOSFET will conduct current in the channel between the source and the drain nodes, provided that the gate-source voltage is high enough. Since the drain-source resistance is low, the output current will be proportional to the applied gate-source voltage.

When the gate-source voltage is low, the MOSFET will be in the "off" state and no output current will pass through the device. Increasing the gate-source voltage will increase the drain-source resistance, allowing more current to flow through the device. This type of device is well suited for switching applications, as the output current can be precisely controlled by varying the gate-source voltage.

Features and Benefits

  • Low On-Resistance: The device features a low drain-source resistance, making it ideal for power switching applications.
  • High Switching Speed: The device offers high switching speeds, making it suitable for high-frequency switching applications.
  • Industry Standard Footprint: The device features an industry-standard footprint, making it compatible with many existing circuit designs.
  • Wide Variety of Packages: The device is available in a wide selection of packages, including SMD, leaded, and specialized IC packages.

Conclusion

The IPP50R350CPXKSA1 is a single n-channel enhancement-mode MOSFET from International Rectifier company, designed for use in power switching, switching and telecommunication applications. It features a low drain-source resistance and fast switching speed, making it ideal for a variety of power and switching applications. The device is offered in a wide variety of packages, making it compatible with existing circuit designs.

The specific data is subject to PDF, and the above content is for reference

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