IPP50R299CPXKSA1

Vgs(th) (Max) @ Id:	3.5V @ 440µA
Package / Case:	TO-220-3
Supplier Device Package:	PG-TO220-3-1
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	104W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1190pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	31nC @ 10V
Series:	CoolMOS™
Rds On (Max) @ Id, Vgs:	299 mOhm @ 6.6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	12A (Tc)
Drain to Source Voltage (Vdss):	550V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Tube

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The IPP50R299CPXKSA1 is a single P-Channel MOSFET transistor with the unique ability to handle large amounts of current in a small, easily transportable package. This makes the IPP50R299CPXKSA1 a versatile component for a variety of applications, from high energy applications such as automotive engine and heavy duty machine control to medium and low power applications such as logic circuits, sensors, and low current power supplies. Although the IPP50R299CPXKSA1 is an analog component, it is composed of digital elements, most of which are FETs (field-effect transistors). This makes it an ideal device to be used in digital circuits that require a high performance, low current device. The low channel resistance of this transistor allows for a high switching speed, making it a perfect choice for high-speed operations. The basic principal of operation for the IPP50R299CPXKSA1 is the same as with any other MOSFET, which is essentially a voltage-controlled device. The transistor is designed to be used in the ON (or linear) region, meaning that when the applied voltage to the gate exceeds the threshold voltage (Vth), the channel is opened, allowing electrons to flow between the source and drain. In applications such as audio amplifiers, the IPP50R299CPXKSA1 is used in place of a regular BJT (bipolar junction transistor) as a high-range amplifier. Since the transistor has an extremely high current gain, it is able to amplify signals with great accuracy, while at the same time increasing the power output. This allows the audio amplifier to give more of an accurate and louder sound. The IPP50R299CPXKSA1 is also commonly used in various power conversion applications, such as DC-DC converters and high-voltage Damped Sine Wave (DSW) converters. In these applications, the transistor is used as a switch to control the flow of current from the power source. When the current enters the transistor, the current gain is used to control the voltage and power available from the circuit. Overall, the IPP50R299CPXKSA1 is a versatile, high-performance and low power MOSFET transistor which can be used in a variety of applications. With its low channel resistance and high current gain, the IPP50R299CPXKSA1 is an ideal choice for medium to high current applications such as audio amplifiers, logic circuits, motors, and power supplies.

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