
Allicdata Part #: | IPP50R399CPXKSA1-ND |
Manufacturer Part#: |
IPP50R399CPXKSA1 |
Price: | $ 0.96 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 500V 9A TO-220 |
More Detail: | N-Channel 500V 9A (Ta) 83W (Tc) Through Hole PG-TO... |
DataSheet: | ![]() |
Quantity: | 1000 |
500 +: | $ 0.86280 |
Vgs(th) (Max) @ Id: | 3.5V @ 330µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 890pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 4nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 399 mOhm @ 4.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Ta) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IPP50R399CPXKSA1 application field and working principle
The IPP50R399CPXKSA1 is a single N-channel enhancement mode power MOSFET device which has been designed for use in applications such as high current switching and load switching. This device has been optimized for low-side switching applications, and it features low on-resistance, fast switching, low gate charge and low gate-source capacitance. The device also has an integrated ESD protection structure which ensures that the device is protected against electrostatic damage.
The IPP50R399CPXKSA1 is a product which is suitable for use in various applications where high current, low voltage switching and load switching is required. It is particularly suitable for applications requiring fast switching, such as motor control, lamp dimmers and light dimmers, as well as low gate-source capacitance is desired. The device can also be used in a range of other applications such as audio amplifiers, power switches and power converters.
The operating principle of the IPP50R399CPXKSA1 MOSFET device is based on the transfer of electrons from the drain to the source terminal by the application of voltage at the gate terminal. The application of voltage at the gate terminal causes the electrons to be attracted from the source to the gate terminal and then pushed from the gate to the drain terminal. As the voltage applied at the gate terminal increases, the resistance across the channel becomes less and the current flow through the channel increases. The drain current of the MOSFET is proportional to the gate voltage, so the higher the gate voltage, the higher the current flow.
The IPP50R399CPXKSA1 device is packaged in an exposed pad surface-mount package, which is suitable for use in a variety of electronic devices. The device is also pre-biased, which eliminates the need for manual bias adjustments and allows the device to be used in a variety of applications. The device also has an over-voltage protection function, which protects the device from damage due to over-voltage conditions.
The IPP50R399CPXKSA1 MOSFET device is an ideal solution for a range of applications requiring high current switching and load switching. Its integrated ESD protection, fast switching, low on-resistance and pre-biased features make it a ideal choice for applications such as motor control, lamp dimmers and light dimmers. It is also suitable for a range of other applications, such as audio amplifiers, power switches and power converters.
The specific data is subject to PDF, and the above content is for reference
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