Allicdata Part #: | IPU039N03LGXK-ND |
Manufacturer Part#: |
IPU039N03LGXK |
Price: | $ 1.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 50A IPAK |
More Detail: | N-Channel 30V 50A (Tc) 94W (Tc) Through Hole PG-TO... |
DataSheet: | IPU039N03LGXK Datasheet/PDF |
Quantity: | 371 |
1 +: | $ 0.91350 |
10 +: | $ 0.80703 |
100 +: | $ 0.63756 |
Specifications
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | PG-TO251-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 94W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5300pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 51nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 3.9 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Description
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The IPU039N03LGXK is a type of power field-effect transistor (FET). It is a single, insulated-gate FET designed for high-power applications and is typically used for switching or amplifier applications. The IPU039N03LGXK is a three-terminal device with a drain, a gate, and a source connection.The IPU039N03LGXK is a N-channel insulated-gate field-effect transistor (IGFET), which is one type of FET. The N-channel is the type of junction between the source and the drain and is created by the addition of dopant impurities to the silicon from which the transistor is made. The dopant atoms introduce electron carriers into the material, allowing current to be easily transferred between the source and drain when the gate is activated.The IPU039N03LGXK is designed for high-power applications, operating as a switch or amplifier. The device is rated for a maximum supply voltage of 30V and a maximum output current of 15A. In terms of its gate voltage, the device can operate from -4V to working voltage (VGS) of 15V.The working principle of anFET is based on the charge carriers. As the gate voltage is increased, the electric field created attracts free electrons in the semiconductor and pushes them near the surface of the gate. This charge accumulation creates an inversion layer, which affects the current between the source and drain and creates a high resistance.The IPU039N03LGXK utilizes this principle to allow current to flow between the source and drain when the gate voltage is increased. This type of field-effect transistor is ideal for applications such as switching and amplification.The IPU039N03LGXK is a single FET designed for high-power applications. It is a three-terminal device with a drain, a gate, and a source connection, controlled by gate voltage. The maximum supply voltage is 30V and the maximum output current is 15A. It is a N-channel insulated-gate field-effect transistor and its working principle is based on the charge carriers. The device is ideal for switching and amplification applications.The specific data is subject to PDF, and the above content is for reference
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