| Allicdata Part #: | IPU090N03LGIN-ND |
| Manufacturer Part#: |
IPU090N03L G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 30V 40A TO-251-3 |
| More Detail: | N-Channel 30V 40A (Tc) 42W (Tc) Through Hole PG-TO... |
| DataSheet: | IPU090N03L G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | PG-TO251-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 42W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 9 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IPU090N03L G is a NMOS field effect transistor (FET). It belongs to a class of semiconductor devices often referred to as a single-gate field effect transistor (FET). These types of transistors are useful in power conversion and motor control application due to its robust design and high current capabilities.
The IPU090N03L G is a uni-channel, depletion mode FET which is designed to operate at high drain-source voltages. It has a Vdss rating of 60V, Ids rating of 90A, and a RDS(ON) rating of 28mOhm. It features low on resistance, low gate threshold voltage, and high gate input capacitance. The single- gate FET also features wide operating temperature range and fast switching characteristics, making it an ideal choice for many power conversion applications.
In operation, an electric field is generated by the gate terminal. The field modulates the conductivity of the semiconductor channel between the source and drain. When the gate voltage is applied, the conductivity of the channel increases. When the gate voltage is taken away the conductivity decreases. This is the basic working principle of a single-gate field effect transistor. The IPU090N03L G has the added advantage of its depletion mode which allows it to be used in applications where a positive gate voltage is not required or needed.
The IPU090N03L G is used primarily in motor control, digital display systems, power conversion, and power supply applications. It is designed and optimized to provide high efficiency and maximum power output while maintaining noise reduction and low on-resistance. In motor control applications, the NMOS FET can be used to switch the phase current of a DC motor and subsequent reduction of power consumption. In digital display systems, the device can be used in rectifier bridges, enabling pulse-width modulation control of the display. In power conversion applications, the device can be used to regulate the voltage and current. Additionally, the device can be used to rectify AC current, enabling it to be used in power supply systems.
The IPU090N03L G is a useful and versatile FET device, as it offers a combination of high power and low on-resistance characteristics making it well suited for a variety of power conversion, motor control, and digital display applications. Additionally, its depletion mode allows for operation without a positive gate voltage, further broadening its potential applications. Overall, the IPU090N03L G\'s unique characteristics make it an ideal choice for many power based applications.
The specific data is subject to PDF, and the above content is for reference
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IPU090N03L G Datasheet/PDF