IPU050N03L G

Vgs(th) (Max) @ Id:	2.2V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	PG-TO251-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	68W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3200pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	31nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	5 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	50A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The IPU050N03L G is a single n-channel, enhancement-mode metal–oxide–semiconductor field-effect transistor (MOSFET). This device is suitable for numerous applications, such as switching, analog, audio, video, and other high-frequency applications. With a breakdown voltage of 20V and an RDSon of 50 mOhm, this device is capable of handling up to 5A of current. Its small size (just 4mm × 3mm) makes it an ideal solution for surface-mount applications, including high-density PCB designs. In this article, we\'ll take a closer look at the IPU050N03L G, exploring its application field and working principle.ApplicationsThe IPU050N03L G is an ideal choice for a wide range of applications. Its low on-resistance and high voltage breakdown capability, allow it to be used in high-frequency switching applications, such as DC-AC inverters, DC-DC converters and motor drives. This device can also be used in low-side switching applications, thanks to its low gate threshold voltage of 1.3V. Additionally, its low input capacitance device makes it well-suited for high-frequency analog applications, such as amplifiers, receivers and oscillators. Finally, its compact size and low power dissipation make it a great choice for low-profile portable devices, such as laptops and mobile phones.Working PrincipleA field-effect transistor is an electronic device that uses an electric field to control the behavior of a large current. The IPU050N03L G is a voltage-controlled MOSFET, which means that it has four terminals: gate, drain, source, and body. These four terminals are used to control and regulate the flow of electrons from the drain to the source.When the gate terminal is brought to a positive potential (above the gate threshold voltage), a channel is formed between the drain and source, allowing electrons to pass from the drain to the source. This is known as enhancement-mode operation. The resistance of this channel is determined by the amount of voltage applied to the gate terminal and is measured in ohms (R DS(on)). The greater the voltage, the lower the resistance and the more current will flow through the device.When the gate terminal is brought to a negative potential, the channel is turned off, resulting in an extremely high resistance, and thus preventing any current from flowing. This is known as depletion-mode operation.As mentioned above, the IPU050N03L G has a breakdown voltage of 20V and an RDSon of 50 mOhm. This means that it can handle loads up to 5A of current at a maximum voltage of 20V. Furthermore, due to its small size, it is capable of operating at high frequencies, making it well suited for high-performance analog and digital applications.In summary, the IPU050N03L G is an ideal choice for switching, analog, audio, video, and other high-frequency applications. It has a wide range of features, including a breakdown voltage of 20V, an RDSon of 50 mOhm, and a gate threshold voltage of 1.3V, that make it well suited for various applications. Moreover, its small size makes it an ideal solution for surface-mount applications, such as high-density PCB designs.

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