IPU04N03LA

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IPU04N03LA is a P-channel enhancement mode Field Effect Transistor (FET) produced by On Semiconductor. It is designed specifically for low-power, low-voltage applications, meaning it is a low-force, low-voltage transistor. It has an “ultra-low threshold voltage” of 0.78 V and its maximum drain current at room temperature is 4A. This means that IPU04N03LA can be used in applications that require very low power consumption. The IPU04N03LA device is packaged in a single monolithic PowerPAK SO-8 package, which is ideal for applications that require very low-power, low-voltage operations. This package is also extremely shrinkable, making it perfect for portable or handheld applications. The IPU04N03LA also features a N-Active arched gate geometry which optimizes its on-resistance over a wide voltage range.IPU04N03LA can be used for a variety of applications, including motor control, load switches, power management, and portable or handheld devices. It is ideal for applications that require very low power consumption, since it can operate on very low voltages and produces very little heat. Additionally, it is often used in applications that require high switching frequency and can operate up to 60 MHz.The IPU04N03LA\'s working principle is based on FETs which are three-terminal, voltage-controlled devices. When a voltage is applied to the device, the voltage applied to the Drain pin is proportionately greater than the voltage applied to the Gate pin. This is called the Drain-Gate voltage relationship, and it results in a very precise control over the drain current.The IPU04N03LA is an ideal device for a variety of applications, due to its low-power, low-voltage operation and its high switching frequency. Additionally, its small size and low profile make it perfect for portable or handheld applications. As such, the IPU04N03LA is a great choice for applications that require precise, low-power control while still being able to operate at high frequencies.

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