IPU04N03LA G Allicdata Electronics
Allicdata Part #:

IPU04N03LAG-ND

Manufacturer Part#:

IPU04N03LA G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 25V 50A IPAK
More Detail: N-Channel 25V 50A (Tc) 115W (Tc) Through Hole PG-T...
DataSheet: IPU04N03LA G datasheetIPU04N03LA G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 80µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: PG-TO251-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 115W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5199pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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Introduction

IPU04N03LA G, also known as a N Channel enhancement mode MOSFET, is widely used in domestic audio systems, CNC controls, medical instruments and many other fields. It is a four-terminal semiconductor device, comes in the form of a small black cylindrical package. This transistor is manufactured by Infineon Technologies, the leading player in the MOSFET market.

Application Field

This MOSFET can be used in a variety of applications. It is an ideal choice for load switching applications, such as on/off switching of motors and other heavy loads. It can also be used for power management and voltage regulation, for example in voltage reference circuits.

The IPU04N03LA G MOSFET can also be used to build a power amplifier, by using the transistor’s high current and low voltage capabilities, along with its excellent speed characteristics. This transistor can also be used to provide local negative feedback for amplifiers.

Working Principle

The IPU04N03LA G uses a metal-oxide-semiconductor field effect transistor (MOSFET) structure. This basic structure consists of three layers; the source, the gate and the drain. When a voltage is applied between the source and the drain, it acts to create an electric field across the gate oxide layer, which then allows charge carriers to flow from the source to the drain.

The MOSFET can be thought of as an electrically controlled switch. By applying a suitable voltage to the gate, the MOSFET can be switched on and off, controlling the flow of current. The channel, or the width of the gap between the source and drain, is adjusted through the gate voltage, being increased as the gate voltage is increased.

When the MOSFET is in a low-voltage state (having low voltage at the gate), the channel is contracted and no current flows through it. This is the “off” state of the MOSFET switch. However, when the appropriate voltage is applied to the gate, the channel is widened and current is allowed to flow through it. This is the “on” state of the MOSFET switch.

Conclusion

The IPU04N03LA G is a versatile MOSFET which can be used in a variety of applications, from motor switching to power management circuits. Its structure and working principle make it an excellent component for switching high current and achieving fast switching times.

The specific data is subject to PDF, and the above content is for reference

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