Allicdata Part #: | IPU05N03LA-ND |
Manufacturer Part#: |
IPU05N03LA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 25V 50A IPAK |
More Detail: | N-Channel 25V 50A (Tc) 94W (Tc) Through Hole P-TO2... |
DataSheet: | IPU05N03LA Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 50µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | P-TO251-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 94W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3110pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 5V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 5.3 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IPU05N03LA is a type of insulated-gate bipolar transistor (IGBT) with embedded diode provided on a TO-220 Green package. It is an ideal solution for applications that require low gate drive power and offer excellent thermal stability.
The IPU05N03LA is an N-channel MOSFET and is especially well-suited for voltage regulation and power control in a wide variety of applications. It is one of the few devices that offer the combination of high frequency and low gate drive power while implementing fast body diode conduction.
The IPU05N03LA has a wide range of application fields. It can be used in power conversion circuits, such as DC-DC converters, switching voltage regulators and SMPS slew rate control, as it offers high frequency operation, fast body diode conduction for snubbing applications, and low gate drive power for fast switching. It can also be used in automotive control systems, as it can accurately control and regulate the voltage in systems ranging from ignition systems to battery chargers. Moreover, it can be used in voltage controlled oscillators and AC contactors.
The working principle of the IPU05N03LA is based on the MOSFET functionality which consists of the gate, drain and source terminals. The gate terminal acts as the control element, where a small current is controlling a larger current flowing from the drain to the source terminal. When enough voltage is applied to the gate terminal and current starts flowing through the gate-drain junction, it creates an electric field that “pulls” electrons from the source terminal, thus creating an “N” type channel, which allows current to flow from the drain to the source terminal. This process is known as “gate turn-on”.
The IPU05N03LA has a built-in body diode, which helps reduce switching losses, improves efficiency and limits the thermal stress. The body diode clamps the voltage at the drain terminal and reduces the time required for switching between states. This helps in maintaining a stable output over a wide range of input voltages.
The IPU05N03LA is a versatile device that is used in numerous application fields. It offers fast body diode conduction, high frequency operation, and low gate drive power, making it perfect for high efficiency dc-dc converters, switching regulators, and other power control circuits. Furthermore, it has been designed for maximum thermal stability and reliability, thus guaranteeing a long and reliable life.
The specific data is subject to PDF, and the above content is for reference
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