IPU04N03LB G Allicdata Electronics
Allicdata Part #:

IPU04N03LBG-ND

Manufacturer Part#:

IPU04N03LB G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 50A IPAK
More Detail: N-Channel 30V 50A (Tc) 115W (Tc) Through Hole P-TO...
DataSheet: IPU04N03LB G datasheetIPU04N03LB G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 70µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: P-TO251-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 115W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 5V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IPU04N03LB G is a n-channel enhancement-mode MOSFET transistor specifically designed for low-voltage applications, such as power-supply and battery-powered systems. The IPU04N03LB G can handle peak and average currents up to 15A and 10A, respectively, and is rated to support voltages up to 40V. It can be used in a wide range of low-voltage applications, from low-power amplifiers to high-power switching circuits, and is capable of providing for both high-efficiency switching and low-voltage operation.

The IPU04N03LB G is a depletion-mode MOSFET transistor, which means that it can be used in either enhancement-mode or depletion-mode operation. In enhancement-mode operation, the IPU04N03LB G uses a small gate voltage to provide for low and high conduction paths between its output and input terminals. This allows the transistor to act as an on/off switch for controlling large currents, typically when high-voltage or high-current signals require control.

In depletion-mode operation, the IPU04N03LB G utilizes a large gate voltage to provide for a higher conduction path between its output and input terminals. This allows the transistor to provide high-speed switching, while also allowing current to be pulled in or pushed out via the input and output terminals. This is especially useful in applications that require faster switching of current, while also providing higher-level voltage control.

The IPU04N03LB G operates in a typical way by functioning as an on/off switch. Its source, drain, and gate are connected to the power input terminals, and when the gate voltage is applied, the transistor will switch on and allow current to flow between the source and drain terminals. Conversely, when the gate voltage is removed, the transistor will switch off, cutting off the current path between the terminals.

The IPU04N03LB G can be used in a variety of applications due to its low on-resistance and high-speed switching capabilities. For example, it can be used as a power MOSFET for high-efficiency switching of power, as a high-speed logic driver for digital electronic circuits, or as an amplifier to control the input/output characteristics of audio and video equipment. In all of these application fields, the IPU04N03LB G is highly reliable, stable, and cost-effective.

The IPU04N03LB G is a great choice if you are looking for a low-voltage MOSFET with high-efficiency switching capabilities and low on-resistance. It is one of the most widely used MOSFET transistors in the world, and is capable of providing reliable, high-performance operation in a variety of applications. If you are designing a low-voltage electronics circuit, then the IPU04N03LB G should definitely be your go-to transistor.

The specific data is subject to PDF, and the above content is for reference

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