IRFP1405PBF Allicdata Electronics
Allicdata Part #:

IRFP1405PBF-ND

Manufacturer Part#:

IRFP1405PBF

Price: $ 2.37
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 95A TO-247AC
More Detail: N-Channel 55V 95A (Tc) 310W (Tc) Through Hole TO-2...
DataSheet: IRFP1405PBF datasheetIRFP1405PBF Datasheet/PDF
Quantity: 1784
1 +: $ 2.37000
10 +: $ 2.29890
100 +: $ 2.25150
1000 +: $ 2.20410
10000 +: $ 2.13300
Stock 1784Can Ship Immediately
$ 2.37
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 310W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 95A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IRFP1405PBF is a N-Channel MOSFET transistor that belongs to the family of Field-Effect Transistors (FETs). A FET is an active semiconductor device which is used to regulate the flow of current in circuit designs. Its design allows it to operate in a linear region and with a low-voltage input, making it a popular choice for many device applications.

An IRFP1405PBF transistor is composed of three main regions of operation, which are the drain region, the gate region, and the source region. The source and drain regions are made up of a single crystal doped with some type of impurity, such as phosphorus or arsenic, to create a semiconductor film with a positive or negative charge. The gate region is comprised of a metal layer that is laid down on top of the source and drain regions. This metal layer is connected to a gate terminal, which is the input port through which the voltage level is supplied.

The working principle of the IRFP1405PBF is based on how the MOSFETs operate. As the gate voltage increases, the electric field that exists between the source and drain regions also increases. This electric field attracts electrons towards the drain, forcing them to leave the source region. As a result, a conduction path is created between the source and drain regions and current can flow through. When the gate voltage is reduced, the electric field collapses and the electrons returned to the source region, meaning that the conduction path is broken, and current cannot flow.

The IRFP1405PBF is commonly used in a variety of applications, such as switched-mode power supplies, DC-DC converters, motor control circuits, as well as audio power amplifiers. It is also popularly used in mobile phone and computer system applications, including DC-to-DC voltage conversion and voltage regulation. Due to its ability to handle high power levels and the ability to operate in linear regions, the IRFP1405PBF is an excellent transistor choice for many power management use cases.

Furthermore, the IRFP1405PBF is also used in more specific applications, such as in airline entertainment systems, automotive systems, UPS systems, home automation, and environmental monitoring, among many others. Additionally, due to its low input and output offset voltage, the IRFP1405PBF is also commonly used in precision measuring and data acquisition applications, for example for monitoring of temperature, pressure, and other parameters.

In conclusion, the IRFP1405PBF is a versatile N-Channel MOSFET transistor that is suitable for many applications. Its design allows it to operate in a linear region with a low-voltage input, making it an optimal choice for many device applications. It is commonly used in switch-mode power supplies, DC-DC converters, motor control circuits, as well as audio power amplifiers and precision measuring and data acquisition.

The specific data is subject to PDF, and the above content is for reference

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