IRFP3306PBF Allicdata Electronics
Allicdata Part #:

IRFP3306PBF-ND

Manufacturer Part#:

IRFP3306PBF

Price: $ 2.35
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 120A TO-247AC
More Detail: N-Channel 60V 120A (Tc) 220W (Tc) Through Hole TO-...
DataSheet: IRFP3306PBF datasheetIRFP3306PBF Datasheet/PDF
Quantity: 8797
1 +: $ 2.35000
10 +: $ 2.27950
100 +: $ 2.23250
1000 +: $ 2.18550
10000 +: $ 2.11500
Stock 8797Can Ship Immediately
$ 2.35
Specifications
Vgs(th) (Max) @ Id: 4V @ 150µA
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 220W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4520pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IRFP3306PBF

IRFP3306PBF is a field effect transistor (FET) designed for use in a wide range of applications. Its main parameters are a breakdown voltage of 600 volts and a maximum drain current of 33 amperes. It is made from a N-Channel silicon material with metal oxide semiconductor field effect transistor (MOSFET) technology.

This type of transistor can be used in a variety of applications, from power management to telecommunications. Specifically, it is used in linear power amplifiers and related applications. It is designed for a high level of reliability and offers low cost and power savings.

The working principle of the IRFP3306PBF is based on the electrical field generated across its gate-source voltage (VGS) and drain-source voltage (VDS) terminals. This electrical field creates an electrical connection between the source and drain. The source-gate terminal (SG) is typically biased to create a linear current flow from the source node to the drain node. When the VGS value increases, the current flow from the source to the drain decreases. Conversely, when the VDS decreases, the current flow between the source and drain increases.

The IRFP3306PBF is designed to be used in a variety of applications with a wide range of supply voltages. It is typically used in power amplifiers, audio amplifiers, current sources, and power supplies. It is also used in many mobile devices, including cell phones and tablets, to regulate the power supply.

In addition, the IRFP3306PBF is used in various audio and video applications, such as pre-amplifiers and audio mixing. It is also used in switch-mode power supplies and other general purpose electronic devices. This type of FET offers excellent reliability, low cost, and power savings.

In any application, the IRFP3306PBF should be operated at supply voltages of 10 V or less for maximum power efficiency. At higher supply voltages, the standby current will increase and reduce the overall efficiency. It is important to be aware of the power consumption of any device using the IRFP3306PBF for optimal performance.

In conclusion, the IRFP3306PBF is an excellent choice for a wide range of applications. Its breakdown voltage of 600 volts and a maximum drain current of 33 amperes offer the power and reliability needed in many applications. Additionally, its low cost and power savings make it a cost-effective solution for many devices. With proper use and consideration of power consumption, the IRFP3306PBF can provide optimal performance in any application.

The specific data is subject to PDF, and the above content is for reference

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