| Allicdata Part #: | IRFP3306PBF-ND |
| Manufacturer Part#: |
IRFP3306PBF |
| Price: | $ 2.35 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 60V 120A TO-247AC |
| More Detail: | N-Channel 60V 120A (Tc) 220W (Tc) Through Hole TO-... |
| DataSheet: | IRFP3306PBF Datasheet/PDF |
| Quantity: | 8797 |
| 1 +: | $ 2.35000 |
| 10 +: | $ 2.27950 |
| 100 +: | $ 2.23250 |
| 1000 +: | $ 2.18550 |
| 10000 +: | $ 2.11500 |
| Vgs(th) (Max) @ Id: | 4V @ 150µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AC |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 220W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4520pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 4.2 mOhm @ 75A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IRFP3306PBF
IRFP3306PBF is a field effect transistor (FET) designed for use in a wide range of applications. Its main parameters are a breakdown voltage of 600 volts and a maximum drain current of 33 amperes. It is made from a N-Channel silicon material with metal oxide semiconductor field effect transistor (MOSFET) technology.
This type of transistor can be used in a variety of applications, from power management to telecommunications. Specifically, it is used in linear power amplifiers and related applications. It is designed for a high level of reliability and offers low cost and power savings.
The working principle of the IRFP3306PBF is based on the electrical field generated across its gate-source voltage (VGS) and drain-source voltage (VDS) terminals. This electrical field creates an electrical connection between the source and drain. The source-gate terminal (SG) is typically biased to create a linear current flow from the source node to the drain node. When the VGS value increases, the current flow from the source to the drain decreases. Conversely, when the VDS decreases, the current flow between the source and drain increases.
The IRFP3306PBF is designed to be used in a variety of applications with a wide range of supply voltages. It is typically used in power amplifiers, audio amplifiers, current sources, and power supplies. It is also used in many mobile devices, including cell phones and tablets, to regulate the power supply.
In addition, the IRFP3306PBF is used in various audio and video applications, such as pre-amplifiers and audio mixing. It is also used in switch-mode power supplies and other general purpose electronic devices. This type of FET offers excellent reliability, low cost, and power savings.
In any application, the IRFP3306PBF should be operated at supply voltages of 10 V or less for maximum power efficiency. At higher supply voltages, the standby current will increase and reduce the overall efficiency. It is important to be aware of the power consumption of any device using the IRFP3306PBF for optimal performance.
In conclusion, the IRFP3306PBF is an excellent choice for a wide range of applications. Its breakdown voltage of 600 volts and a maximum drain current of 33 amperes offer the power and reliability needed in many applications. Additionally, its low cost and power savings make it a cost-effective solution for many devices. With proper use and consideration of power consumption, the IRFP3306PBF can provide optimal performance in any application.
The specific data is subject to PDF, and the above content is for reference
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IRFP3306PBF Datasheet/PDF