IRFP22N60C3PBF

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The IRFP22N60C3PBF transistor is a high-performance silicon-controlled n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) designed for high-speed switching applications such as power inverters, transistors, converters and amplifiers. Its simple construction, high operating frequency, and low power dissipation make it an ideal device for low-power, high-speed switching applications.

The device is packaged in the TO-220AB package, which provides a low-profile solution for high-power switching applications. The TO-220AB package has two leads, one for the gate and one for the drain, and is ideal for single-ended applications. Alternatively, the two-lead SOT-223 package can be used for dual-ended applications.

The IRFP22N60C3PBF operates as a voltage-controlled switch, passing current between its drain and source when the gate-source voltage reaches the threshold voltage and turning off when it falls below the threshold voltage. It is rated to handle currents up to 22A and voltages up to 600V. The device has low on-resistance, low gate-charge, and fast switching speeds, making it ideal for high-speed, high-power switching applications. It also features low gate-threshold voltage, low input capacitance, low switching losses, and soft body-diode recovery.

The operating temperature of the IRFP22N60C3PBF ranges from -55°C to +150°C. The device is rated to withstand up to 175°C when mounted on a suitable heat sink. The peak drain-source current is greater than 22A and the peak drain-source voltage is 600V. The maximum thermal resistance is 1.2°C/W junction-to-case.

The IRFP22N60C3PBF is well suited for high-power, high-speed switching applications, such as power inverters, transistors, converters, and amplifiers. It is also suitable for applications involving forward-seric flow from the source-to-drain and body effect applications, such as fan control in air conditioners and lighting control in home automation systems. The device\'s low on-resistance, fast switching speeds, and low power dissipation make it an ideal choice for these and many other applications.

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