| Allicdata Part #: | IRFP3206PBF-ND |
| Manufacturer Part#: |
IRFP3206PBF |
| Price: | $ 2.61 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 60V 120A TO-247AC |
| More Detail: | N-Channel 60V 120A (Tc) 280W (Tc) Through Hole TO-... |
| DataSheet: |  IRFP3206PBF Datasheet/PDF |
| Quantity: | 10555 |
| 1 +: | $ 2.61000 |
| 10 +: | $ 2.53170 |
| 100 +: | $ 2.47950 |
| 1000 +: | $ 2.42730 |
| 10000 +: | $ 2.34900 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 150µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AC |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 280W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 6540pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 3 mOhm @ 75A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Bulk |
Description
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IRFP3206PBF is an N-channel MOSFET module developed by Infineon Technologies. It belongs to the third-generation thin-film power MOSFET series with a wide range of applications. In terms of function, it has the characteristics of ultra-low resistance, fast switching speed and high power output, so it is widely used in many fields.
First of all, IRFP3206PBF can be used in battery pack high discharge switch in electric vehicles, high power multi-channel active interleaving power supply and bridge rectifier of solar inverter. On the one hand, it has excellent current handling, ultra-low on-resistance, very low gate charge and fast switching speed, which are better than other MOSFETs, making it very suitable for greener and more efficient switching. On the other hand, with the increase of electric vehicles and solar inverter, IRFP3206PBF can reduce the cost and size of power supplies and further reduce the impact on environment.
Secondly, IRFP3206PBF can be used in industrial automation, industrial control and robotics. Adopting the third-generation thin film MOSFET process, the excellent ESD strength, fast switching speed and ultra-low resistance make it the preferred component of industrial automation and quickly respond to signal changes. In addition, thanks to its low gate charge, it can provide maximum power transmission efficiency, reduce switching losses and make the device compliant with industrial-level safety regulations. Besides, the excellent switching performance and low power consumption of IRFP3206PBF are also the main advantages that make it one of the most used MOSFETs in industrial automation and control.
Finally, IRFP3206PBF is also used in power conversions and point-of-load circuits. With the increasing demand for energy-saving, IRFP3206PBF\'s low resistance, fast switching speed and high power output are excellent features. It can significantly reduce the dissipated power and noise in the system, making it more energy-efficient and quiet. Moreover, the voltage drop and heat generated by IRFP3206PBF is much lower than those of other MOSFETs, making it particularly helpful in protecting other components in the circuit. Besides, its excellent ESD protection also allows it to work in high-risk environments.
In summary, IRFP3206PBF is an N-channel MOSFET module developed by Infineon Technologies and is well suited for a wide range of applications including electric vehicles, solar inverters, industrial automation, and power conversions. Thanks to its excellent features such as ultra-low resistance, fast switching speed and high power output, it is the preferred MOSFET in today\'s industrial automation and power conversions field.
The specific data is subject to PDF, and the above content is for reference
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