| Allicdata Part #: | IRFP3415PBF-ND |
| Manufacturer Part#: |
IRFP3415PBF |
| Price: | $ 2.44 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 150V 43A TO-247AC |
| More Detail: | N-Channel 150V 43A (Tc) 200W (Tc) Through Hole TO-... |
| DataSheet: |  IRFP3415PBF Datasheet/PDF |
| Quantity: | 4013 |
| 1 +: | $ 2.44000 |
| 10 +: | $ 2.36680 |
| 100 +: | $ 2.31800 |
| 1000 +: | $ 2.26920 |
| 10000 +: | $ 2.19600 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AC |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 200W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 200nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 42 mOhm @ 22A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 43A (Tc) |
| Drain to Source Voltage (Vdss): | 150V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Bulk |
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IRFP3415PBF is an N-channel MOSFET, commonly referred to as a metal-oxide-semiconductor field-effect transistor, or MOSFET. It is used in a wide variety of applications, ranging from digital logic and switching to power amplification and voltage regulation. The device is capable of operating at very high frequencies, up to 1 GHz.
The IRFP3415PBF features high drain-source breakdown voltage and drain current capabilities. Its drain-source breakdown voltage is rated at 83V, while its maximum drain current is 73A. Additionally, the device features a low on-resistance of just 4.2 Ohms and a low capacitance of only 6.8pF. The device is highly reliable and suitable for use in a variety of industrial and consumer applications.
The working principle of the IRFP3415PBF is based on the MOSFET structure. It is constructed from a metal gate and a pair of source and drain regions, which are separated by an oxide layer. A positive voltage is applied to the gate, causing the oxide layer to become conductive, allowing the current to flow from the source to the drain. The amount of current is controlled by the voltage applied to the gate and the capacitance of the MOSFET.
The IRFP3415PBF is used in a wide variety of applications, such as power amplifiers, motor controllers, switching power supplies, and voltage regulator circuits. Due to its high drain current capabilities and its low on-resistance, the device is ideal for applications requiring high power delivery, such as motor control and power amplification. Additionally, the device\'s high frequency response makes it suitable for digital logic and switching power supplies.
The IRFP3415PBF is an ideal device for applications requiring high power delivery, low distortion, and excellent reliability. Its high drain current capabilities, low On-resistance, and high frequency response make it suitable for a wide variety of applications. The device is highly reliable and suitable for use in industrial and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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