IRFP260PBF Allicdata Electronics
Allicdata Part #:

IRFP260PBF-ND

Manufacturer Part#:

IRFP260PBF

Price: $ 4.31
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 200V 46A TO-247AC
More Detail: N-Channel 200V 46A (Tc) 280W (Tc) Through Hole TO-...
DataSheet: IRFP260PBF datasheetIRFP260PBF Datasheet/PDF
Quantity: 245
1 +: $ 3.91230
10 +: $ 3.49398
100 +: $ 2.86486
500 +: $ 2.31983
1000 +: $ 1.95649
Stock 245Can Ship Immediately
$ 4.31
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 280W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 55 mOhm @ 28A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRFP260PBF is a power IRF N-Channel MOSFET device, which is used in a wide variety of applications and works on the principle of field-effect transistors. This type of transistor has two terminals and has a further gate terminal. Using this gate terminal, voltage is applied to the device to control the conductivity of the channel and can be used to control the current flow in analog and digital circuits. The IRFP260PBF has an utmost source-drain voltage rating of 600V as well as a drain-source resistance of 0.010 Ohm. It has an electric charge of 52mC which is responsible for its fast switching capabilities.

The primary application field of the IRPF260 PBF is for high power switching circuits. This MOSFET is mainly used in high and medium power-switching applications such as in home appliances, automotive electronics, in motor control, and other power control applications. It is capable of switching voltages up to 600V, making it suitable for applications where high voltages must be controlled. It is also used in DC to DC converters and in many power supply applications where voltage regulation is required.

The working principle of the IRPF260 PBF is based on field-effect transistors. A field-effect transistor is an active form of a semiconductor device that acts like an amplifier. The IRPF260 acts as an amplifier to control the power supply of a device. On the gate terminal, an input voltage is applied which is then amplified and then passed on to the drain and the source terminals, where the output voltage is determined. The transistors amplify the current and enable switching from low to high and from high to low. This allows for the control of the amount of current flowing, and when the maximum current is reached, the device can be turned off.

The IRFP260 PBF is also used in many power electronics applications, such as switched-mode power supplies, inverters, and motor drivers. It can be used to regulate power by switching the voltage and current, and it can also be used to supply power to the circuit during low-power operation. Its fast switching capabilities also make it suitable for use in high-speed switching applications. It is also used in pulse width modulation (PWM) based applications.

The IRFP260 PBF is a high-performance device which is capable of operating at very high speeds and temperature. It is highly reliable, cost-effective and has a wide variety of applications. This device can be used to build power circuits which can switch voltage and current quickly and accurately, enabling a system to provide high levels of power while consuming a minimum amount of electricity. This device is also suitable for use in numerous applications where precise power control is important, such as in power electronics, home appliances and automotive electronics.

The specific data is subject to PDF, and the above content is for reference

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