IRFPC40PBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	150W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1300pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	60nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	1.2 Ohm @ 4.1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	6.8A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The IRFPC40PBF is a type of metal-oxide-semiconductor field-effect transistors (MOSFETs). It is specifically a single-gate field-effect transistor that is manufactured by IGBT manufacturer International Rectifier (IR). This type of transistor is used in many applications and can be used in the following industries: automotive, communication, computing, lighting, and industrial.

What is a MOSFET?

Before discussing the IRFPC40PBF’s applications and working principles, it is important to gain a basic understanding of what a MOSFET is. A Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a type of transistor that works in a similar manner as “traditional” transistors. The main differences are that the voltage on the Gate terminal controls the current flowing through the other terminals of the transistor and that there is no physical connection between the Gate and the other terminals.Basically, the MOSFET is a three terminal device, where one terminal is designated as the Gate, the second and third terminals are the Source and Drain, respectively. When a voltage is applied between the Gate and Source terminals, an electric field is created in the region between the Gate and the Source, which weakens the strength of electrons between the Source and Drain. The overall effect of this is that electrons will very slowly travel through the channel between the Source and Drain. The voltage between the Gate and Source controls the flow of current through the channel, which is why the MOSFET is necessarily to control the flow of current in any application.

Features and Benefits of the IRFPC40PBF

TheIRFPC40PBF transistor is manufactured in a 8-lead SOP package.The IRFPC40PBF has very low on-resistance which is why it is often used in both low-voltage and high-current applications. It provides excellent switching performance and an inductive load rating of up to 4A at 45V. TheIRFPC40PBF has an operating temperature range of -55°C to +175°C, allowing the transistor to be used in the most severe of applications. It also has a maximum Vds of 40V, making it capable of handling a high voltage which also makes it suitable for automotive applications.

IRFPC40PBF Application Field

Due to its high-performance specification, theIRFPC40PBF field-effect transistor is widely used across many industries. It is highly suitable for automotive applications, due to its low on-resistance, high-current ratings, and maximum Vds rating. Also, it is used in communication systems, such as mobile phones and radios, due to its ability to control signals. It is also commonly used in computing devices, as its high-speed switching capability makes it ideal for digital and logic devices. Additionally, it is used in lighting and industrial applications.

IRFPC40PBF Working Principle

The IRFPC40PBF MOSFET works in two modes, which is the enhancement mode, and the depletion mode. In the enhancement mode, no current will pass between the Source and Drain terminals, until a voltage is applied between the Gate and Source terminal, which creates an electric field that allows current to pass between the Source and Drain. In the depletion mode, a current will pass through the channel even with no voltage applied between the Gate and Source terminals. The voltage applied between the Gate and Source terminals will determine the current flow through the channel, which can be controlled to produce a desired effect.

Conclusion

In conclusion, the IRFPC40PBF is a single-gate MOSFET transistor that is used in a wide variety of applications. It has very low on-resistance and is capable of handling high current and voltage. Its operating temperature range of -55°C to +175°C makes it ideal for use in all kinds of applications. It works on the principle of an electric field being applied between the Gate and Source terminals, which controls the current flow between the Source and Drain.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description