
Allicdata Part #: | IRFPC60LC-ND |
Manufacturer Part#: |
IRFPC60LC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 600V 16A TO-247AC |
More Detail: | N-Channel 600V 16A (Tc) 280W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 280W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3500pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 9.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRFPC60LC is a type III-V metal-oxide-semiconductor metal–oxide–semiconductor field-effect transistor (MOSFET). It benefits from an extremely low on-resistance and leakage current and is tailored for a variety of power container applications.
The IRFPC60LC features low RDS(ON) at a maximum of 80 mOhms within the safe operating area. It has good thermal stability and excellent total gate charge of 39 nC. It operates at ambient temperatures up to 150 °C and is rated for a continuous drain current of 70 A. This device is compatible with common gate drive voltage of 5 V, making it ideal for a variety of power management and control applications.
The IRFPC60LC is offered in a Lead-free, 8-Lead Plastic PowerDIP (TVSP) package. The package construction offers a cost-effective alternative to traditional smd-type packages and is RoHS-compliant.
The IRFPC60LC is suitable for many power container applications, including power converters, motor drives, transportation systems, power control and monitoring, and distributed power systems. It is also suitable for use in ITE insulation applications. It is commonly used in a synchronous rectifier circuit in combination with an N-channel device.
The IRFPC60LC works on the principle of the depletion-mode MOSFET. It functions by creating an inverted channel with a positive gate-to-source voltage, allowing the source to draw current from the drain. The junction created between the gate and the source constitutes a diode, allowing current to flow to the source when the drain is in an off-state or when the drain-source voltage is reversed. The internal diode is designed to protect the gate from over-voltage breakdowns.
The device also features a built-in gate protection resistor to reduce the risk of gate-to-source shorting. The additional protection feature helps protect the MOSFET from gate-oxide-damage due to voltage spikes or ESD.
In summary, the IRFPC60LC is a low-on-resistance and low leakage current PowerDIP MOSFET ideal for a variety of power container applications. It operates at low gate drive voltages and features an integrated protection feature for better device reliability. It is offered in an 8-lead PowerDIP package in a lead-free option. It is an excellent choice for applications requiring robust, low-power control and power management.
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