
Allicdata Part #: | IRFP15N60LPBF-ND |
Manufacturer Part#: |
IRFP15N60LPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 600V 15A TO-247AC |
More Detail: | N-Channel 600V 15A (Tc) 280W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 280W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2720pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 460 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRFP15N60LPBF is a type of FET (Field-effect transistor) that belongs to the single MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) category. It is mainly used in the field of power electronics because of its large breakdown voltage and low gate capacitance. This device can be used for precisely controlling electronic circuits, so it is ideal for applications such as power converters, DC-DC converters and switching power supplies.
The main function of IRFP15N60LPBF is to act as a switch to control the flow of electronic current. It is made up of three terminals: the gate, the source and the drain. The gate terminal is used to control the voltage, while the source and drain terminals control the current flow through the device. This type of MOSFET has an enhancement mode, meaning that the current flow through the device is not controlled by the gate voltage until a certain threshold is reached.
In terms of working principle, the IRFP15N60LPBF is an N-type MOSFET meaning it uses a combination of electrons and holes as a charge carrier. It is constructed using a metal channel between the source and drain as well as a thin layer of semiconductor material, such as silicon dioxide, at the surface of the metal channel. When a voltage is applied to the gate terminal, it causes electrons to be repelled from the metal channel, creating a depletion zone that is conductive to current. This depletion zone is then regulated by the voltage applied to the gate terminal, allowing precise control of current flow through the device.
The IRFP15N60LPBF is ideal for a wide range of applications such as in various types of power converters and DC-DC converters, as well as any applications where overall energy efficiency is of importance. Additionally, it can be used in circuits that require high speed switching or high-frequency operation. It is also used in power switching circuits and power supply circuits for regulating the current flow. Furthermore, it can be used as a protection device to prevent overdriving in circuits, as well as a switch for DC motor control and as a rectifier for audio amplifiers.
IRFP15N60LPBF is a rugged and reliable transistor device with excellent characteristics, making it suitable for a wide range of power electronics applications. It is easy to use and provides stable operation even with high power input. Its low gate capacitance allows for high-speed switching and high-frequency operation, making it ideal for high-power applications. It also has low on-state resistance, which makes it highly efficient, reducing overall power consumption. Overall, IRFP15N60LPBF is an ideal choice for applications requiring power control and voltage regulation.
The specific data is subject to PDF, and the above content is for reference
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