
Allicdata Part #: | IRFP23N50LPBF-ND |
Manufacturer Part#: |
IRFP23N50LPBF |
Price: | $ 5.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 500V 23A TO-247AC |
More Detail: | N-Channel 500V 23A (Tc) 370W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 798 |
1 +: | $ 5.44320 |
10 +: | $ 5.27990 |
100 +: | $ 5.17104 |
1000 +: | $ 5.06218 |
10000 +: | $ 4.89888 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 370W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3600pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 235 mOhm @ 14A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IRFP23N50LPBF is an enhancement mode metal oxide semiconductor field effect transistor(MOSFET) manufactured by International Rectifier. It belongs to the single category of FETs and MOSFETs.
The IRFP23N50LPBF is a 50V n-channel power MOSFET, which is capable of providing an operating temperature range from -55°C to 175°C. It has a high current rating of 14A, a maximum source-drain voltage rating of 80V, and an on-resistance of 0.012 Ω. It also features a very low gate charge of 8.3nC, making it highly suitable for high frequency switching applications.
Due to its impressive power handling ability, the IRFP23N50LPBF is widely used in a variety of power handling applications, such as in battery eliminates, motor controls and other power supplies. It is also commonly used in power amplifiers and can be found in many high-end audio devices to boost the performance of the electronics.
The power MOSFET also finds application in other areas like switched-mode power supply (SMPS), motor controller, and audio amplifiers. The use of this transistor allows engineers to design circuits which provide more power, increased efficiency, and reduced noise.
The working principle of the IRFP23N50LPBF is based on the fact that when a bias voltage is applied between the gate terminal and source, a depletion region is created inside the MOSFET, effectively forming a one-way current source from source to drain. As a result, the current from drain to source is inhibited and the transistor acts as a switch.
The electrical characteristics of the IRFP23N50LPBF enable it to perform better than many other power MOSFETs, and allow it to be used in a variety of switching applications. It also offers a high level of immunity to noise, even when high frequencies are involved.
Overall, the IRFP23N50LPBF MOSFET is highly versatile and suitable for use in a wide range of applications. Its wide range of features, reliable operation, and high power handling capabilities are sure to make it a popular choice for many years to come.
The specific data is subject to PDF, and the above content is for reference
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