IRFP254PBF Allicdata Electronics
Allicdata Part #:

IRFP254PBF-ND

Manufacturer Part#:

IRFP254PBF

Price: $ 2.79
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 250V 23A TO-247AC
More Detail: N-Channel 250V 23A (Tc) 190W (Tc) Through Hole TO-...
DataSheet: IRFP254PBF datasheetIRFP254PBF Datasheet/PDF
Quantity: 327
1 +: $ 2.79000
10 +: $ 2.70630
100 +: $ 2.65050
1000 +: $ 2.59470
10000 +: $ 2.51100
Stock 327Can Ship Immediately
$ 2.79
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 190W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 140 mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IRFp254PBF is one of the most commonly used single MOSFETs. It is designed to provide reliable switching capability for a variety of different applications. The device can be used in both low voltage and high voltage applications as it is capable of operating at up to 100V.

The major advantages of this device are its robust power handling capability, low on-state resistance, high switching speed and input capacitance. It is available in a variety of packages to suit a wide range of applications and is a popular choice among designers looking for a reliable and cost effective solution.

In general, the IRFp254PFD is used to control the flow of current. It is used in a variety of applications such as motor control, automation and in industrial electronics. It is also used in LED lighting applications for dimming and color control.

The IRFp254PBF is a N-channel enhancement mode MOSFET, meaning that the device operates as an electronic switch with its drain and source terminals connected to an external circuit. When a voltage is applied to its gate terminal, the device’s internal depletion layer decreases its resistance and current can flow between the source and the drain. This enables power to be supplied when the gate voltage is activated.

The device is designed with a dynamic maximum drain current rating of 2.8A and a static drain-source on-resistance of 19mΩ. The lower resistor reduces power losses during switching, leading to higher power efficiency. As well, the transistor’s high-speed switching capability ensures that it can switch rapidly, reducing the possibility of errors.

In terms of power handling, the IRFp254PBF can handle up to 100V, as referenced above. This allows the device to be used in a variety of applications and voltage levels. The device also has a wide operating temperature range from -55°C to 150°C.

The IRFp254PBF has a wide variety of available packages, including small-sized surface-mount packages, dual-in-line packages and more, which allows for flexible circuit board designs. Additionally, the device offers excellent thermal resistance and heat dissipation capabilities, making it well suited for high power applications.

Overall, the IRFp254PBF is a popular and reliable single MOSFET as it offers high power handling, low on-state resistance, wide operating temperature range, and a variety of package types. In addition, its wide voltage range and thermal resistance capabilities make it an excellent choice for a variety of applications across a variety of industries.

The specific data is subject to PDF, and the above content is for reference

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