IRFP31N50L Allicdata Electronics
Allicdata Part #:

IRFP31N50L-ND

Manufacturer Part#:

IRFP31N50L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 500V 31A TO-247AC
More Detail: N-Channel 500V 31A (Tc) 460W (Tc) Through Hole TO-...
DataSheet: IRFP31N50L datasheetIRFP31N50L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 460W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 180 mOhm @ 19A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRFP31N50L Application Field and Working Principle

IRFP31N50L is a type of Insulated Gate Bipolar Transistor (IGBT), also known as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It belongs to the family of field-effect transistors, and is used as a power switch in various electronic devices.

The IRFP31N50L is a single N-channel device in the IGBT family, with a blocking voltage of 500V and a current rating of 31A. It has low gate charge, low on-state resistance, and has a high frequency operation of up to 50kHz.

The IRFP31N50L can be used in various applications, such as in automotive and industrial electronics, power converters, ac-dc regulators, and dc-dc converters. It can also be used for auxiliary power switching and pulse-width modulation, power switches for consumer electronics, and for EMI (electromagnetic interference) reduction.

The IRFP31N50L works by using a drain-source voltage and a gate voltage to control the current flow from the drain to the source. The device has three modes of operation—the enhancement mode, depletion mode and hybrid mode—which are dependent on the magnitude of the gate-source voltage. In the hybrid mode, the device is in a region between the enhancement and depletion modes.

In the enhancement mode, a positive gate-source voltage is applied, and increases the conductivity between the drain and source. This increases the device’s on-state current, and requires a certain drain-source voltage to keep the device in this mode. In the depletion mode, a negative gate-source voltage is applied, which decreases the drain-source current.

In the hybrid mode, the device behaves like a switch, allowing the current to flow between the drain and source when the gate-source voltage is greater than zero. The device remains off when the gate-source voltage is equal to zero. This type of operation is used in various applications such as switching power supplies, motor control, and PWM applications.

The IRFP31N50L is a reliable and power efficient device, which makes it ideal for various applications. It is also a cost-effective device, and easily available in the market. The device is designed to operate in different temperature ranges, and is suitable for a variety of applications, such as automotive and industrial electronics, power converters, ac-dc regulators, and dc-dc converters.

The specific data is subject to PDF, and the above content is for reference

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