| Allicdata Part #: | IRFP31N50LPBF-ND |
| Manufacturer Part#: |
IRFP31N50LPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 500V 31A TO-247AC |
| More Detail: | N-Channel 500V 31A (Tc) 460W (Tc) Through Hole TO-... |
| DataSheet: |  IRFP31N50LPBF Datasheet/PDF |
| Quantity: | 615 |
Specifications
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 460W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5000pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 210nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 180 mOhm @ 19A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 31A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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IRFP31N50LPBF is a widely used insulating gate bipolar transistor (IGBT). IGBTs are highly efficient devices used in power switching applications and are comprised of two basic parts – an insulated gate N-channel MOSFET and a bipolar junction transistor (BJT). The IGBTs combination of these two technologies offers superior performance over traditional methods. This specific device is an N-channel enhancement mode MOSFET with a rated collector-emitter (C-E) voltage of 700V and collector current (C-C) of 31A.The IGBT is favored for its superior switching performance over conventional technologies such as BJTs, MOSFETs, and thyristors. The device has less power loss and higher power density while being able to switch much faster than other technology.The IRFP31N50LPBF is ideal for motor control in systems such as AC/DC converters, variable frequency drives, lighting systems and other switching applications. The device integrates insulation, low on-resistance, EMI noise suppression and fast switching.IRFP31N50LPBF combines the excellent switching performance of MOSFETs with accurate current control of BJTs and can be used in applications ranging from motor drives to power supplies and motor inverters. It is particularly suitable for DC-DC converter applications such as DC-AC converters in battery powered systems, or automotive and renewable energy. The device offers a variety of advantages such as low on-resistance, excellent circuit design flexibility and layout, low power consumption, and very efficient operation due to its capability to minimize power losses at high frequencies.The IRFP31N50LPBF maintains the same excellent switching performance of MOSFETs by utilizing an insulated gate and applying appropriate voltage. The structure of the device enables it to anticipate and reduce power losses working at high frequencies, thus achieving high efficiency and low thermal losses. The device also reduces EMI noise by controlling the switching speed accordingly.The device also takes care of the potentially dangerous load transients due to inductive loads. In such cases, the IGBT can keep the switching energy within a safe range since its design minimizes reverse current flow when turned off and its switching time is shorter than that of other technologies.In conclusion, the IRFP31N50LPBF is a fast and efficient device suitable for switching applications that require high voltage and current ratings and accurate current control. Its combination of MOSFET and BJT technologies offers superior performance over more traditional solutions.
The specific data is subject to PDF, and the above content is for reference
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