![IRFP350LC Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | IRFP350LC-ND |
Manufacturer Part#: |
IRFP350LC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 400V 16A TO-247AC |
More Detail: | N-Channel 400V 16A (Tc) 190W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 190W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2200pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 76nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 300 mOhm @ 9.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRFp350LC is a robust, dynamic, and reliable single-channel MOSFET. It is specially designed to provide voltage control in electronic power devices. As a leading supplier in the field of power semiconductors, IRFp350LC offers superior performance in applications such as motor control, uninterruptible power supplies, and lighting control.
The IRFp350LC has a maximum voltage rating of 800V and a drain-source on-state resistance of 4.5 ohms. Its breakdown voltage is determined by connecting the drain-source junction to a power source. A minimum gate voltage of 3V is required to control the output voltage.
The IRFp350LC is made up of three major components: a substrate, channel, and source. The substrate is an insulated material that provides electrical isolation between the source and channel. The channel is a conductor between the drain and source that serves as a passageway for electrons. The source is the source of electrons and serves as the input and output for the device.
The principle of operation for the IRFp350LC is based on a four-layer process. The four layers are the substrate, the drain, the source, and the gate. When a voltage is applied to the gate, electrons flow from the source to the drain, creating a channel or path between the two. The current flowing through this channel is called the drain current, and is regulated by the gate-source voltage.
The IRFp350LC can be used in a variety of applications, such as motor control, power conversion, consumer electronics, and telecom equipment. The device is ideal for applications requiring high current and reliable performance. The low gate charge and low gate-source voltage requirements make the IRFp350LC a popular choice for consumer power applications.
Furthermore, the IRFp350LC MOSFET is specially designed for high power and high efficiency power conversion applications. It is capable of handling peak currents of up to 30 A and its high pulse current capability allows for greater power conversion efficiency. The device also has low gate charge and low gate-source voltage requirements for improved efficiency.
The IRFp350LC is a very versatile device and can be used in a variety of applications. It is an ideal choice for power electronic devices that require high-efficiency power conversion and reliable performance. The device also has a low gate charge and low gate-source voltage requirements. In summary, the IRFp350LC is a robust and reliable MOSFET suitable for a range of power electronics applications.
The specific data is subject to PDF, and the above content is for reference
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