
Allicdata Part #: | IRFP4332PBF-ND |
Manufacturer Part#: |
IRFP4332PBF |
Price: | $ 3.54 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 250V 57A TO-247AC |
More Detail: | N-Channel 250V 57A (Tc) 360W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1329 |
1 +: | $ 3.54000 |
10 +: | $ 3.43380 |
100 +: | $ 3.36300 |
1000 +: | $ 3.29220 |
10000 +: | $ 3.18600 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AC |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Power Dissipation (Max): | 360W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5860pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 33 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 57A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Bulk |
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IRFP4332PBF is a vertical N-channel MOSFET (metal oxide semiconductor field-effect transistor) designed and manufactured by Infineon Technologies. The IRFP4332PBF is ideally suited to applications such as switching power supplies, voltage regulators, SMPS and other high-frequency power conversion systems. It has achieved a high level of popularity due to its ease of use, high efficiency and good thermal performance.
The IRFP4332PBF is a power MOSFET, meaning that it is an insulated gate field effect transistor (IGFET) with a large drain-source breakdown voltage (VDS) and drain-source on-state resistance (RDSon). Its low gate charge (Qg) and low output capacitance (Coss) make it useful for switching applications. It has a maximum voltage rating of 110V, a current (drain-source) rating of 80A, and a maximum operating temperature of 175°C.
The IRFP4332PBF can be used in a variety of applications, most notably in SMPS (switching mode power supplies), dc-dc converters, voltage regulators, lighting applications and automotive electronics. It is also used in mobile phones and portable electronic devices, due to its low power consumption, fast switching speeds and low capacitance. As it has a low on-state resistance, it is also well suited for applications requiring high levels of efficiency, such as server and telecom power supplies.
The IRFP4332PBF is a vertical power MOSFET, featuring a gate oxide layer and a floating body region. It consists of an insulated gate, a source and a drain, connected to a substrate. When a voltage is applied to the gate, a strong electric field is created between the gate and the drain. This field induces a current flow between the drain and the source, allowing for a current flow between the two. As the voltage increases, the amount of current that can flow through the MOSFET increases, resulting in a higher supply current.
The IRFP4332PBF is designed to offer good protection against voltage and current surges, as well as providing excellent thermal performance. It can operate at extended temperature ranges, allowing for a greater range of use in different applications. It is also able to handle varying levels of current and can be used to operate a number of devices, such as motor controllers, heating elements, lamps and LEDs.
In conclusion, the IRFP4332PBF is an excellent choice for a variety of applications due to its excellent switching speeds, low on-state resistance, low gate charge and good thermal performance. Its versatility and cost-effectiveness make it an attractive option for power supplies and SMPS applications. Its low capacitance and high drain-source breakdown voltage mean that it can handle varying levels of current while maintaining its efficiency and reliability.
The specific data is subject to PDF, and the above content is for reference
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