IRFP7718PBF

Vgs(th) (Max) @ Id:	3.7V @ 250µA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247AC
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	517W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	29550pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	830nC @ 10V
Series:	HEXFET®, StrongIRFET™
Rds On (Max) @ Id, Vgs:	1.8 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	195A (Tc)
Drain to Source Voltage (Vdss):	75V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The IRFP7718PBF is a high performance field-effect transistor (FET) designed for applications in high-power switched mode power supplies. It is a 200V N-channel enhancement mode, with off-state resistance of 70mΩ and 1A drain current. This device is a cost-effective and highly reliable solution for applications such as power converters, inverters, motor drives, and high-current switching applications.The IRFP7718PBF is primarily designed to switch current from the drain to the source. A gate voltage is applied to the control gate input which controls the electric current flowing from the drain to the source. When a positive gate voltage is applied, the N-channel FET is turned “on” which allows current to flow from the source to the drain. When the gate voltage is less than the threshold voltage, the FET is turned “off” and current can no longer pass.By properly controlling the power to the gate, the IRFP7718PBF can be used to control current flow from the source to the drain in a selectable and repeatable fashion with high efficiency. This makes it suitable for a wide range of applications, such as for controlling the speed of a motor or for regulating AC/DC switching voltage.The device has a very low on-state resistance and a high reverse body-drain breakdown voltage of 200 Volt (Vdss) rating. The on-state resistance is 70 milli-ohms (mΩ) max at a drain current of 1 Amp (A) which enables a large number of switching cycles with minimal power dissipation.The IRFP7718PBF also has a very low gate threshold voltage of 0.9 Volt (Vgs-th), enabling it to be used in applications with a low voltage power source. It has an operating temperature range of -55℃ to 175℃ and will not require any additional heatsink for normal operation.The IRFP7718PBF is designed with a T-level metal oxide semiconductor (MOS) process and is put through extensive testing and quality assurance, making it one of the most reliable FETs on the market. It also features built-in protection for handling high current over-stress, full off-state breakdown protection, and built-in self-protection circuitry for shorted loads.Overall, the IRFP7718PBF is an ideal choice for applications where current must be switched at high rates and with low dissipation. It is a reliable, efficient, and cost-effective FET that is highly suitable for applications such as power supplies, motor controls, power converters, and DC to AC/DC switching.

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