IRFPC40 Allicdata Electronics
Allicdata Part #:

IRFPC40-ND

Manufacturer Part#:

IRFPC40

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 600V 6.8A TO-247AC
More Detail: N-Channel 600V 6.8A (Tc) 150W (Tc) Through Hole TO...
DataSheet: IRFPC40 datasheetIRFPC40 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFPC40 is a single insulated-gate field effect transistor that is manufactured by Infineon Technologies, a leading industrial and automotive electronics company. It is a widely used transistor due to its low on-resistance and high current carrying capability, as well as its fast switching speed. This makes it well suited for many applications in the automotive, computing, and communications industries.

Basic Structure and Working Principle

The IRFPC40 is a standard metal oxide semiconductor field effect transistor (MOSFET) which comprises of four basic parts, viz. the source, gate, drain and substrate. The source and drain are heavily doped regions of N or P-type semiconductor material. These two regions are separated by a thin and lightly doped region called the gate. The substrate is the fourth and most important part of the transistor and is usually made of the same type of semiconductor material as the source and drain regions. The substrate is connected to the source and drain by a thin and lightly doped channel of semiconductor material. This forms the path through which current can flow, when the source to drain voltage, VD, is applied.

The current flow between the source and drain of a MOSFET is controlled by the voltage applied to the gate. As the voltage applied to the gate increases, the electric field between the source and drain gets stronger and the current flow increases. This is known as the transconductance or gain of the transistor. The gain, gm, is measured in siemens per volt (S/V) and is proportional to the applied gate voltage.

Features

The IRFPC40 provides many advantages over other single insulated gate FETs. The low on-resistance is one of its most distinguishing characteristics. This on-resistance provides stable operation within a wide range of gate voltage and temperature. Additionally, the device is housed in a low-profile, exposed pad package that is easy to solder and offers a degree of flexibility. The package also features three pin terminals, making it suitable for a variety of applications.

The low input capacitance of the IRFPC40 provides fast switching performance, making it ideal for high speed applications. The device is also capable of providing high power efficiency, making it an excellent choice for power management applications. This makes the IRFPC40 particularly suitable for automotive, computing and communications applications, where power efficiency and speed are paramount.

Applications

The applications of the IRFPC40 are varied. It is ideal for automotive applications such as vehicle telematics, engine management systems, and body control modules. The device is also suitable for computing applications, as its low input capacitance allows for high speed switching. On the communications front, the device is well suited for signal processing, such as for base station power amplifiers used in cellular networks. Additionally, the device is also applicable in consumer electronics, providing efficient regulation and power control.

Conclusion

The IRFPC40 is an insulated gate field effect transistor suited for many applications in the automotive, computing and communications industries. The device provides many advantages over other single insulated gate field effect transistors, such as low on-resistance and high power efficiency. Its fast switching speed and its ability to provide efficient regulation makes the IRFPC40 a popular choice among system designers. The device is suitable for a variety of applications, including automotive, computing, signal processing and consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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