IRFPC60

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The IRFP460 high-efficiency MOSFET is an advanced power semiconductor device that can be used in a variety of switching applications. It is an ideal choice for high-power switching applications that require high efficiency, low loss, and low noise operation. This application note describes the features and benefits of the IRFP460, including its working principle and application field.

Features of the IRFP460

The IRFP460 is a high-frequency, high-power MOSFET with high current capabilities and low on-resistance. This MOSFET is available in a variety of packages, ranging from the PowerTrench SO-8 to the DPAK D-PAK, and is suitable for a wide range of power electronic applications. The IRFP460 has a guaranteed breakdown voltage of 1000 V, a maximum continuous drain current of 11A and a maximum drain-source on-resistance of only 1.3 ohms at 10VGS.

The IRFP460 has several advantages over other MOSFETs, including a higher current capacity, higher frequency operation, and superior switching performance. The IRFP460 also has a low gate charge, making it more efficient than traditional MOSFETs, and it is designed to operate with a minimum of gate-source capacitance.

Working Principle of the IRFP460

The IRFP460 is a N-channel MOSFET that operates on the principle of majority carrier injection. When a drain-source voltage is applied, electrons from the source side are injected into the channel and are attracted by the drain voltage. This creates a current flow through the channel, similar to an electron flow through a conventional transistor.

The structure of the IRFP460 is designed in such a way that allows it to achieve a low on-resistance. The design of the IRFP460 has a lightly doped drain region and a heavily doped region of the gate. The lightly doped drain region is more susceptible to the electric field created by the gate and therefore has a higher gain and lower on-resistance.

Application Fields of the IRFP460

The IRFP460 is an ideal device for use in high-frequency and high-power applications, such as DC-DC converters, motor drive circuits, and switching amplifiers. It is also suitable for automotive applications, including electric and hybrid vehicles, as well as renewable energy applications.

Due to its low on-resistance and high current capacity, the IRFP460 is also an excellent choice for power MOSFET applications. It can be used in switching power supplies, bulk converters, resonant converters, and other power applications. The IRFP460 is also ideal for use in high-capacity inverters and welders.

The IRFP460 is also suitable for use in high-efficiency audio amplifier circuits. The device has low switch noise and is capable of high-power delivery. This makes it an ideal choice for use in high-power audio applications.

In summary, the IRFP460 is an advanced, high-efficiency MOSFET suitable for a variety of switching applications. It has a maximum continuous drain current of 11A and a maximum drain-source on-resistance of only 1.3 ohms at 10VGS. The device has a lightly doped drain region and a heavily doped region of the gate, which provide a low on-resistance and high gain. Additionally, the device is capable of operating with a minimum of gate-source capacitance, making it highly efficient and suitable for use in high-power audio applications.

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