
Allicdata Part #: | IRFPS37N50APBF-ND |
Manufacturer Part#: |
IRFPS37N50APBF |
Price: | $ 6.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 500V 36A SUPER247 |
More Detail: | N-Channel 500V 36A (Tc) 446W (Tc) Through Hole SUP... |
DataSheet: | ![]() |
Quantity: | 762 |
1 +: | $ 6.16140 |
10 +: | $ 5.97656 |
100 +: | $ 5.85333 |
1000 +: | $ 5.73010 |
10000 +: | $ 5.54526 |
Specifications
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-274AA |
Supplier Device Package: | SUPER-247 (TO-274AA) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 446W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5579pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 130 mOhm @ 22A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Description
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IRFPS37N50APBF is a single-gate FET which is an enhancement-type metal-oxide-semiconductor (MOSFET) device produced by International Rectifier (IR). It is classified as a N-Channel Depletion-type metal-oxide-semiconductor field-effect transistor (MOSFET), commonly abbreviated as NDFET.The IRFPS37N50APBF is widely used in power management applications and, in particular, in power management circuits of mobile phones. The device has a maximum rating of 50 Amperes and a drain-source breakdown voltage (BVdss) of 37 volts.The application field and working principle of the IRFPS37N50APBF are covered in detail in this article.
Application Field of IRFPS37N50APBF
The IRFPS37N50APBF is designed for applications such as DC/DC switching converters, power management circuits, and motor control circuits. One of the most popular applications of this device is in mobile phone power management circuits. It is used in this application due to its high current handling capacity, low on-state resistance, and high voltage gate-source breakdown rating. The device can also be used in applications where low on-state resistance and low on-state voltage drop are required, such as switch mode power supplies, AC/DC and DC/DC converters, automotive applications, DC motor control systems and household appliances. Other uses include white goods, telecom systems, battery chargers, and computer systems.Working Principle of IRFPS37N50APBF
The IRFPS37N50APBF is a N-Channel Depletion-type metal-oxide-semiconductor field-effect transistor (MOSFET). The MOSFETs work on the principle of applying an electric field to alter the conductivity of the semiconductor. When an electrical potential is applied between the drain and source electrodes, the electrons present in the channels flow from the source to the drain, and the current is called Drain-Source currents (Ids). The conductivity of these channels can also be controlled by applying a positive gate voltage (Vgs). This voltage is known as the gate-source voltage (Vgs) and it increases the conductivity of the channel, thus allowing more electrons to flow from source to drain.The gate of the IRFPS37N50APBF has a p-type gate oxide. This gate oxide makes it an enhancement-type MOSFET, meaning the source-drain channel is completely shut off when Vgs is below the threshold voltage (Vth). When Vgs is greater than the threshold voltage (Vth), the device turns on, allowing electrons to flow through the channel and increases Ids. The IRFPS37N50APBF offers a wide drain-source breakdown voltage (BVdss) of up to 37 volts and a maximum continuous drain current of up to 50 amps. It also has a low on-state resistance (Rds) of 13 milliohms, making it suitable for applications wherein lower power dissipation is desirable.Conclusion
To conclude, the IRFPS37N50APBF is a single-gate FET, an enhancement-type metal-oxide-semiconductor (MOSFET) device, which is primarily used in power management applications. The device has a maximum rating of 50 Amperes and a drain-source breakdown voltage (BVdss) of 37 volts. It also offers a low on-state resistance (Rds) of 13 milliohms and a wide drain-source breakdown voltage (BVdss) of up to 37 volts. It is suitable for applications like switch mode power supplies, mobile phone power management circuits, AC/DC and DC/DC converters, automotive applications, DC motor control systems, and household appliances.The specific data is subject to PDF, and the above content is for reference
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