IRFPS37N50APBF Allicdata Electronics
Allicdata Part #:

IRFPS37N50APBF-ND

Manufacturer Part#:

IRFPS37N50APBF

Price: $ 6.16
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 500V 36A SUPER247
More Detail: N-Channel 500V 36A (Tc) 446W (Tc) Through Hole SUP...
DataSheet: IRFPS37N50APBF datasheetIRFPS37N50APBF Datasheet/PDF
Quantity: 762
1 +: $ 6.16140
10 +: $ 5.97656
100 +: $ 5.85333
1000 +: $ 5.73010
10000 +: $ 5.54526
Stock 762Can Ship Immediately
$ 6.16
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-274AA
Supplier Device Package: SUPER-247 (TO-274AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 446W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5579pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 130 mOhm @ 22A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRFPS37N50APBF is a single-gate FET which is an enhancement-type metal-oxide-semiconductor (MOSFET) device produced by International Rectifier (IR). It is classified as a N-Channel Depletion-type metal-oxide-semiconductor field-effect transistor (MOSFET), commonly abbreviated as NDFET.The IRFPS37N50APBF is widely used in power management applications and, in particular, in power management circuits of mobile phones. The device has a maximum rating of 50 Amperes and a drain-source breakdown voltage (BVdss) of 37 volts.The application field and working principle of the IRFPS37N50APBF are covered in detail in this article.

Application Field of IRFPS37N50APBF

The IRFPS37N50APBF is designed for applications such as DC/DC switching converters, power management circuits, and motor control circuits. One of the most popular applications of this device is in mobile phone power management circuits. It is used in this application due to its high current handling capacity, low on-state resistance, and high voltage gate-source breakdown rating. The device can also be used in applications where low on-state resistance and low on-state voltage drop are required, such as switch mode power supplies, AC/DC and DC/DC converters, automotive applications, DC motor control systems and household appliances. Other uses include white goods, telecom systems, battery chargers, and computer systems.

Working Principle of IRFPS37N50APBF

The IRFPS37N50APBF is a N-Channel Depletion-type metal-oxide-semiconductor field-effect transistor (MOSFET). The MOSFETs work on the principle of applying an electric field to alter the conductivity of the semiconductor. When an electrical potential is applied between the drain and source electrodes, the electrons present in the channels flow from the source to the drain, and the current is called Drain-Source currents (Ids). The conductivity of these channels can also be controlled by applying a positive gate voltage (Vgs). This voltage is known as the gate-source voltage (Vgs) and it increases the conductivity of the channel, thus allowing more electrons to flow from source to drain.The gate of the IRFPS37N50APBF has a p-type gate oxide. This gate oxide makes it an enhancement-type MOSFET, meaning the source-drain channel is completely shut off when Vgs is below the threshold voltage (Vth). When Vgs is greater than the threshold voltage (Vth), the device turns on, allowing electrons to flow through the channel and increases Ids. The IRFPS37N50APBF offers a wide drain-source breakdown voltage (BVdss) of up to 37 volts and a maximum continuous drain current of up to 50 amps. It also has a low on-state resistance (Rds) of 13 milliohms, making it suitable for applications wherein lower power dissipation is desirable.

Conclusion

To conclude, the IRFPS37N50APBF is a single-gate FET, an enhancement-type metal-oxide-semiconductor (MOSFET) device, which is primarily used in power management applications. The device has a maximum rating of 50 Amperes and a drain-source breakdown voltage (BVdss) of 37 volts. It also offers a low on-state resistance (Rds) of 13 milliohms and a wide drain-source breakdown voltage (BVdss) of up to 37 volts. It is suitable for applications like switch mode power supplies, mobile phone power management circuits, AC/DC and DC/DC converters, automotive applications, DC motor control systems, and household appliances.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "IRFP" Included word is 40
Part Number Manufacturer Price Quantity Description
IRFP3415PBF Infineon Tec... -- 4013 MOSFET N-CH 150V 43A TO-2...
IRFP22N60K Vishay Silic... -- 1000 MOSFET N-CH 600V 22A TO-2...
IRFP450B ON Semicondu... -- 1000 MOSFET N-CH 500V 14A TO-3...
IRFP150N Infineon Tec... -- 1000 MOSFET N-CH 100V 42A TO-2...
IRFP054N Infineon Tec... -- 1000 MOSFET N-CH 55V 81A TO-24...
IRFP440PBF Vishay Silic... -- 308 MOSFET N-CH 500V 8.8A TO-...
IRFP3306PBF Infineon Tec... -- 8797 MOSFET N-CH 60V 120A TO-2...
IRFP4668PBF Infineon Tec... -- 13573 MOSFET N-CH 200V 130A TO-...
IRFP17N50LPBF Vishay Silic... -- 797 MOSFET N-CH 500V 16A TO-2...
IRFP350LCPBF Vishay Silic... 5.18 $ 289 MOSFET N-CH 400V 16A TO-2...
IRFP4310ZPBF Infineon Tec... -- 432 MOSFET N-CH 100V 120A TO-...
IRFP7430PBF Infineon Tec... -- 1006 MOSFET N CH 40V 195A TO24...
IRFP3206PBF Infineon Tec... -- 10555 MOSFET N-CH 60V 120A TO-2...
IRFP23N50L Vishay Silic... -- 1000 MOSFET N-CH 500V 23A TO-2...
IRFP260 IXYS 0.0 $ 1000 MOSFET N-CH 200V 46A TO24...
IRFP90N20DPBF Infineon Tec... -- 660 MOSFET N-CH 200V 94A TO-2...
IRFP22N60C3PBF Vishay Silic... 0.0 $ 1000 MOSFET N-CH 650V 22A TO-2...
IRFP9240PBF Vishay Silic... -- 1847 MOSFET P-CH 200V 12A TO-2...
IRFP26N60LPBF Vishay Silic... -- 1237 MOSFET N-CH 600V 26A TO-2...
IRFP260PBF Vishay Silic... 4.31 $ 245 MOSFET N-CH 200V 46A TO-2...
IRFP22N60KPBF Vishay Silic... -- 19 MOSFET N-CH 600V 22A TO-2...
IRFP254NPBF Vishay Silic... -- 1000 MOSFET N-CH 250V 23A TO-2...
IRFPE50PBF Vishay Silic... -- 194 MOSFET N-CH 800V 7.8A TO-...
IRFP048PBF Vishay Silic... -- 797 MOSFET N-CH 60V 70A TO-24...
IRFPC60PBF Vishay Silic... -- 1000 MOSFET N-CH 600V 16A TO-2...
IRFP450A Vishay Silic... -- 1000 MOSFET N-CH 500V 14A TO-2...
IRFPS30N60KPBF Vishay Silic... 0.0 $ 1000 MOSFET N-CH 600V 30A SUPE...
IRFP4229PBF Infineon Tec... -- 388 MOSFET N-CH 250V 44A TO-2...
IRFP044PBF Vishay Silic... 0.0 $ 1000 MOSFET N-CH 60V 57A TO-24...
IRFP344 Vishay Silic... -- 1000 MOSFET N-CH 450V 9.5A TO-...
IRFP3006PBF Infineon Tec... -- 945 MOSFET N-CH 60V 257A TO24...
IRFP4127PBF Infineon Tec... 4.62 $ 850 MOSFET N-CH 200V 75A TO-2...
IRFP244PBF Vishay Silic... -- 30 MOSFET N-CH 250V 15A TO-2...
IRFP340 Vishay Silic... -- 1000 MOSFET N-CH 400V 11A TO-2...
IRFP4321PBF Infineon Tec... -- 2752 MOSFET N-CH 150V 78A TO-2...
IRFPS40N50LPBF Vishay Silic... -- 834 MOSFET N-CH 500V 46A SUPE...
IRFPC40PBF Vishay Silic... -- 443 MOSFET N-CH 600V 6.8A TO-...
IRFPE50 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 800V 7.8A TO-...
IRFP150MPBF Infineon Tec... -- 430 MOSFET N-CH 100V 42A TO-2...
IRFPC60LC Vishay Silic... 0.0 $ 1000 MOSFET N-CH 600V 16A TO-2...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics