IRFPS3810 Allicdata Electronics
Allicdata Part #:

IRFPS3810-ND

Manufacturer Part#:

IRFPS3810

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 170A SUPER247
More Detail: N-Channel 100V 170A (Tc) 580W (Tc) Through Hole SU...
DataSheet: IRFPS3810 datasheetIRFPS3810 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-274AA
Supplier Device Package: SUPER-247 (TO-274AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 580W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6790pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 390nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 9 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

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IRFPS3810 is an n-channel Enhancement-Mode Power MOSFET manufactured by International Rectifier (IR). This device has been designed to minimize the on-state resistance while providing fast switching performance. It is well suited for use in load switch, DC-DC converters, and power amplifier applications.

The IRFPS3810 belongs to the family of single, enhancement-mode power field-effect transistors (FETs) also known as MOSFETs. FETs are unipolar transistors with three terminals: the source, drain, and gate. MOSFETs, a type of FET, are insulated-gate devices whose gate-source terminal is electrically isolated from the remaining two terminals. They are used to control the power dissipation in low-voltage, low-power applications.

The working principle of the IRFPS3810 is based on the Gate to Source Voltage (VGS) controlling current flow between the drain and source. When a negative voltage is applied to the gate, it creates a depletion region in the form of an electric field on the drain side of the gate oxide layer. This field is responsible for blocking current flow and acting as a switch in the device. When a positive voltage is applied to the gate, it creates an accumulation region on the drain side of the gate oxide layer. This field is responsible for allowing current flow and acting as a switch in the device.

The primary application field of the IRFPS3810 is as a load switch in low voltage, low power applications. This device can be used to switch a load between on and off states. When the device is in the on-state, it will draw a static current (IDSS) based on the VDS voltage, which is the voltage between drain and source terminals. When the device is in the off-state, its Source-Drain Voltage (VSD) will be approximately equal to the VDD voltage, which is the voltage applied to the drain terminal.

In DC-DC converters, the IRFPS3810 is used to switch between two or more different voltage levels. This device can be used to control the power delivery to the load by switching the voltage level dynamically. It is also used in power amplifiers to switch between two different power delivery stages. This device can be used to switch between high and low voltage levels to allow the amplifier to achieve maximum power delivery.

The IRFPS3810 is an excellent choice for use in low-voltage, low-power applications due to its fast switching performance and low on-state resistance. Its ability to switch between two different power delivery states and its low voltage, low current consumption make it an optimal choice for use in load switch, DC-DC converters, and power amplifier applications.

The specific data is subject to PDF, and the above content is for reference

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