Allicdata Part #: | IRFPS38N60L-ND |
Manufacturer Part#: |
IRFPS38N60L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 600V 38A SUPER247 |
More Detail: | N-Channel 600V 38A (Tc) 540W (Tc) Through Hole SUP... |
DataSheet: | IRFPS38N60L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-274AA |
Supplier Device Package: | SUPER-247 (TO-274AA) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 540W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7990pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 320nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 23A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 38A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRFP38N60L is an N-channel MOSFET (metal oxide semiconductor field effect transistor). MOSFETs are used in a wide range of applications and have a number of advantages over other types of transistors. This article will discuss the various application fields and working principle of the IRFP38N60L MOSFET.
Application Fields of IRFP38N60L
The IRFP38N60L MOSFET can be used in many applications. It is commonly used in DC/DC converters, low-noise amplifiers, audio amplifiers and power supplies, and power switch circuits. It is also used in voltage-controlled oscillators, AC to DC switching applications, and other power management applications.
The IRFP38N60L has an extremely low on-resistance of just 38Ω, making it ideal for use in high-frequency switching applications. It also has a high current rating, allowing it to drive higher loads and have greater efficiency. This makes it suitable for use in power supplies, motor controllers, and other power management applications, as well as in audio amplifiers and other audio applications.
Working Principle of IRFP38N60L
The IRFP38N60L MOSFET is an N-channel MOSFET. MOSFETs use voltage as opposed to current to control the current flow through the device. This is achieved through a silicon gate electrode with an electrical charge that controls the flow of electrons from the drain to the source. Depending on the voltage applied to the gate, the current through the device can be switched on or off.
The IRFP38N60L is a vertical D-MOSFET, which means it is constructed with two vertical channels for higher performance. The device has a high peak current carrying capacity and superior current handling capability compared to other types of MOSFETs. Additionally, this type of MOSFET has a high switching speed, allowing it to be used in high-frequency switching applications.
The IRFP38N60L can operate in either the depletion or the enhancement mode. In the depletion mode, the voltage applied to the gate of the MOSFET decreases the current flow. In the enhancement mode, the voltage applied to the gate increases the current flow. This allows the IRFP38N60L to be used in a variety of applications depending on which mode is used.
Conclusion
The IRFP38N60L is a popular N-channel MOSFET, suitable for use in a variety of applications. It has a low on-resistance, high current rating, and high-frequency switching capabilities. Additionally, the IRFP38N60L can operate in both depletion and enhancement modes for greater flexibility. This makes the IRFP38N60L an ideal choice for many applications, from audio amplifiers to motor controllers.
The specific data is subject to PDF, and the above content is for reference
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