
Allicdata Part #: | IRFPS40N50L-ND |
Manufacturer Part#: |
IRFPS40N50L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 500V 46A SUPER247 |
More Detail: | N-Channel 500V 46A (Tc) 540W (Tc) Through Hole SUP... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-274AA |
Supplier Device Package: | SUPER-247 (TO-274AA) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 540W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8110pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 380nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 28A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 46A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRFPS40N50L device is a n-channel Power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed and manufactured by International Rectifier. It is designed as a semiconductor device within the framework of a power MOSFET family and its working principle is based on the traditional MOSFET structure.
The device features an advanced low capacitance design, allowing superior performance over traditional power MOSFETs. As such, it has a low gate-charge and low total-gate-charge design. This results in a remarkably fast switching times and more effective power-handling capabilities when compared with traditional FETs. The IRFPS40N50L is a single-MOSFET transistor type and it is commonly used as an alternative to BJT (Bipolar Junction Transistor) transistors.
The IRFPS40N50L is used in a variety of applications, most notably in power electronics applications. These include motor drives, such as those employed in motor speed controls, motor starters, and motor-operated valves. It is also used in a variety of power supplies, such as those found in personal computers, cell phones and other consumer electronics. Additionally, it is used in automotive and telecommunication applications.
The working principle of the IRFPS40N50L MOSFET is based on the structure of a power MOSFET. The device consists of a semiconductor substrate, consisting of a P-type doped layer on top of an N-type layer. The N-type layer provides the conductive channel needed for current to flow from source to drain. A gate electrode is then added on top of the P-layer, and the gate voltage is used to control the current flow from source to drain.
When the gate voltage is increased to a certain level, the P-layer will begin to conduct, allowing current to flow from source to drain. This mode is called the "ON" state. Meanwhile, when the gate voltage is decreased, the device\'s conduction stops and current ceases, effectively turning it "OFF". This is the basic operation of a power MOSFET, and it is the same principle that is used in the IRFPS40N50L.
The IRFPS40N50L is a great choice for applications that require fast switching times and high power-handling capabilities. Its design features allow for improved performance compared to typical MOSFETs, and its low gate-charge makes it ideal for applications in industries such as motor drives, power supplies, and telecommunication. Furthermore, the IRFPS40N50L is a single-transistor, making it a simple device with an uncomplicated structure.
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