Allicdata Part #: | IRFPS40N60KPBF-ND |
Manufacturer Part#: |
IRFPS40N60KPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 600V 40A SUPER247 |
More Detail: | N-Channel 600V 40A (Tc) 570W (Tc) Through Hole SUP... |
DataSheet: | IRFPS40N60KPBF Datasheet/PDF |
Quantity: | 128 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-274AA |
Supplier Device Package: | SUPER-247 (TO-274AA) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 570W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7970pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 330nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 130 mOhm @ 24A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IRFPS40N60KPBF is a semiconductor device product sold by International Rectifier (IR), a company based in the United States. It belongs to the family of insulated-gate bipolar transistor (IGBT) products, and it is a single N-channel Field-Effect Transistor (FET). It occupies a slightly larger footprint than other IGBTs, and its maximum drain to source voltage (VDS) stands at 600 V. Therefore, it is suitable for medium-power applications such as motor controls, welding, and solar inverters.
IRFPS40N60KPBF can be described as a three-terminal device. The device consists of a Source terminal, represented by the letter S, a Drain terminal, represented by the letter D, and a Gate terminal, represented by the letter G. It has an internal structure characteristic of FETs, which consists of a semiconductor substrate, a source region, a drain region and a gate. In fact, a cross-sectional view of the device shows a layer of dielectric material between the gate and the substrate.
The working principle of a FET is based on the flow of electrons. As you apply a voltage to the Gate terminal of a FET, it creates an electric field. This electric field is strong enough to penetrate the dielectric of the FET and induce an electric charge within the semiconductor substrate. This charge attracts electrons to the area close to the gate, forming a conductive channel between the source and the drain. As a result, the FET acts as a switch and allows electricity to flow between the source and the drain terminals.
IRFPS40N60KPBF is mostly used in medium-power applications. These include motor controls, welding, solar inverters, automotive powertrain, and air conditioner drives. Its wide drain-source voltage range allows for flexibility in the power supply and the amount of current it can handle. Its on-state and switching characteristics are improved by the field effect that makes it reliable and efficient for these kinds of applications.
In conclusion, IRFPS40N60KPBF acts as a single N-channel FET that is suitable for medium-power applications. It can be used in motor controls, welding, solar inverters and many other applications. Its on-state and switching characteristics are improved by its field effect and it offers flexibility in terms of power supply and current handling capacity. Therefore, it is an efficient and reliable solution for medium-power applications.
The specific data is subject to PDF, and the above content is for reference
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