IRG5K150HF12B Allicdata Electronics
Allicdata Part #:

IRG5K150HF12B-ND

Manufacturer Part#:

IRG5K150HF12B

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOD IGBT 1200V 150A POWIR 62
More Detail: IGBT Module Half Bridge 1200V 300A 1060W Chassis ...
DataSheet: IRG5K150HF12B datasheetIRG5K150HF12B Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: --
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 300A
Power - Max: 1060W
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 150A
Current - Collector Cutoff (Max): 2mA
Input Capacitance (Cies) @ Vce: 19nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: POWIR® 62 Module
Supplier Device Package: POWIR® 62
Description

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Igbt (Insulated Gate Bipolar Transistor) Module IRG5K150HF12B is a new type of transistor that represents the state-of-the-art components of power electronicindustry. This module can be applied for any type of high power,high frequency application and power conversion/inverter/motor drive system. This module also shows excellent performance in various industrial applications.

IRG5K150HF12B module inculcates advanced low loss, high speed switching and low EMI for high conversion efficiency. It provides isolation voltage up to 5KV and offers superior temperature rating between -40 to +150 degree Celsius. This module is excellent for high speed switching and high current pumping applications. It ensures high power density in the system with high typical conduction and switching losses.

The working principle of IRG5K150HF12B module is highly analogous to the counterparts like MOSFETs. This module works based on the combination of two semiconductor power devices i.e. PNP bipolar junction transistor (BJT) and N-channel MOSFETs. It acts as a bridge between PNP and N-Channel MOSFETs. Its IGBT gate electrodes controls the PNP BJT and allows for if low swing, higher frequency switching and low EMI.

The main application areas of IRG5K150HF12B module include applications like motor drive systems, motor control, UPS systems, high frequency switching systems, industrial control, inverting systems and solar panel systems. For motor drive systems, this module provides a perfect solution for controlling the speed and power of AC and DC motor. It is also ideal for industrial control applications due to its high speed switching capability.

For solar panel systems, IRG5K150HF12B module provides a superior solution for controlling the voltage and current generated by Solar cells. It also ensures high efficiency and low switching losses in this system. It also has wide range of applications in UPS systems and inverting systems. This module offers best-in-class performance in these systems.

IRG5K150HF12B module is a highly efficient and cost-effective module designed for high power, high frequency applications. With its advanced features, it provides excellent switching capability and superior performance in various industrial applications. Its working principles are highly advantageous to gate control and isolation voltage to provide enhanced stability and reliability. Its applications can be diversely tailored for UPS systems, motor drive systems, inverting systems and for solar panel systems as well.

The specific data is subject to PDF, and the above content is for reference

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