IRG5U50HH12E

Series:	--
Part Status:	Obsolete
IGBT Type:	--
Configuration:	Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	85A
Power - Max:	390W
Vce(on) (Max) @ Vge, Ic:	3.5V @ 15V, 50A
Current - Collector Cutoff (Max):	1mA
Input Capacitance (Cies) @ Vce:	6nF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	POWIR ECO 2™ Module
Supplier Device Package:	POWIR ECO 2™

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IRG5U50HH12E Application Field and Working PrincipleIRG5U50HH12E belongs to a family of a new generation of advanced insulated gate bipolar transistor (IGBT) modules, with 1200V rating, developed in Japan by ROHM Co., Ltd. These modules encompass the latest technology and offer a large range of advantages over conventional IGBTs and other competitively priced products.In the power semiconductor market, the IRG5U50HH12E is a sophisticated and high-performance line of IGBT Modules with very low on-state losses and a wide range of power output ratings. It has an exceptionally robust mechanical design, featuring low derating and high junction temperature tolerance, making it ideal for industrial motor drives and other power conversions applications.The IRG5U50HH12E is a perfect choice for applications that demand reliability, high power density, improved efficiency, and easy integration into a wide range of systems. It is especially suitable for industrial motor drives, air conditioning and refrigeration, solar power systems, lighting, etc.The IRG5U50HH12E offers significant advantages over conventional IGBTs and other competitively priced products. It features a unique design with a metal-oxide-semiconductor field-effect transistor (MOSFET) gate that is well-suited to switching from ON to OFF rapidly and accurately over a wide range of frequency and voltage. This design also allows for a short-circuit current limitation which can protect the system from sudden power spikes. The IGBT module also offers a high level of thermal dissipation, which in turn reduces the risk of thermal runaway.The working principle of IRG5U50HH12E is simple and straightforward. The IGBT module is basically a rectifying diode and an insulated gate transistor which are connected in series. The current flow through the circuit is controlled by the gates of the two semiconductors. When a gate is positively charged, the current from the rectifying diode passes freely through the transistor, while when the gate is negatively charged, the current is blocked by the transistor. Thus, the IGBT module can essentially be used to switch ON and OFF the current flow in a circuit.Apart from its useful application field, the IRG5U50HH12E is also cost-effective and easy to integrate into different systems. This makes it ideal for applications which demand high performance at a low cost. As a result, it is increasingly becoming the go-to solution for high-power applications in the industry.To sum up, the ROHM Co. Ltd. IRG5U50HH12E is an advanced IGBT module with high power density, low on-state losses, excellent thermal dissipation, and a wide range of power ratings. Its unique design combining the MOSFET and diode makes it suitable for a wide range of applications in industrial motor drives, air conditioning and refrigeration, solar energy systems, etc. Its low cost and easy integration make it the ideal choice for high-power, cost effective applications.

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