IRG5U75HH06E Allicdata Electronics
Allicdata Part #:

IRG5U75HH06E-ND

Manufacturer Part#:

IRG5U75HH06E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOD IGBT 600V 75A POWIR ECO 2
More Detail: IGBT Module Full Bridge Inverter 600V 100A 330W C...
DataSheet: IRG5U75HH06E datasheetIRG5U75HH06E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: --
Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 100A
Power - Max: 330W
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 75A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: POWIR ECO 2™ Module
Supplier Device Package: POWIR ECO 2™
Description

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The IRG5U75HH06E module is a type of Insulated Gate Bipolar Transistor (IGBT) module which has several important applications and works in a specific way. IGBT modules are used in a range of high-powered applications such as power semiconductor electronics and power conversion systems due to their high efficiency and low switching losses. They are particularly useful for applications where high-speed switching is needed.

The IRG5U75HH06E module is a 600V, 75A device which is well suited for use in a variety of power electronics applications. This module has a maximum collector current rating of 75A and a maximum working frequency of 25kHz. It also features a wide operating temperature range of -55°C to +125°C and a low on-state voltage drop for improved system efficiency. It is designed for use in AC and DC motor drive applications, UPS systems, variable frequency drives, renewable energy systems, solar applications, and industrial lighting systems.

The working principle of the IRG5U75HH06E module is based on the operation of IGBTs. An IGBT is a type of transistor which combines the properties of both a BJT and an MOSFET. It has the high switching speed of a MOSFET and the high-power handling capability of a BJT. The basic principle behind the operation of an IGBT is the use of a negative voltage applied to the gate to turn the transistor off and a positive voltage applied to the gate to turn the transistor on.

In the case of the IRG5U75HH06E module, the IGBTs are connected in an inverse-parallel configuration and are controlled via the Gate-Emitter and Emitter-Base junctions. A positive Gate-Emitter voltage will turn the IGBTs on and a negative voltage will turn them off. The module also features built-in protection measures such as over-current and over-temperature protection to ensure optimal performance in high-power applications.

In conclusion, the IRG5U75HH06E module is a type of IGBT module which has several important applications in the field of power semiconductor electronics. It is designed for use in AC and DC motor drive applications, UPS systems, variable frequency drives, renewable energy systems, solar applications, and industrial lighting systems and works on the principle of using a negative voltage applied to the gate to turn the IGBTs off and a positive voltage applied to the gate to turn them on. The module also has built-in protection measures such as over-current and over-temperature protection which ensure optimal performance in high-power applications.

The specific data is subject to PDF, and the above content is for reference

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