IRG5K200HF06B Allicdata Electronics
Allicdata Part #:

IRG5K200HF06B-ND

Manufacturer Part#:

IRG5K200HF06B

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOD IGBT 600V 200A POWIR 62
More Detail: IGBT Module Half Bridge 600V 340A 800W Chassis Mo...
DataSheet: IRG5K200HF06B datasheetIRG5K200HF06B Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: --
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 340A
Power - Max: 800W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
Current - Collector Cutoff (Max): 2mA
Input Capacitance (Cies) @ Vce: 11.9nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: POWIR® 62 Module
Supplier Device Package: POWIR® 62
Description

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IGBT, also known as Insulated Gate Bipolar Transistor, is an electronic component consisting of an insulated gate and a bipolar junction transistor and is widely used in applications such as AC motor control, photovoltaic inverters, uninterruptible power supplies, and high-power switches. IRG5K200HF06B is a typical IGBT module developed by the famous semiconductor company Infineon.

Application Field

IRG5K200HF06B is designed to achieve full rated voltage with lower switching losses and high output current in applications like solar inverters, motor drives, and AC/DC converters. It is especially suitable for applications in inverters of permanent magnet synchronous motor (PMSM) and line voltage conversion, such as system controls and motor drives. Its integration of digital control, intelligence and power modules enables higher power density and greatly simplifies the motor packaging design and manufacturing processes.

Working Principle

Io RG5K200HF06B is an IGBT module that uses Infineon\'s IGBT chip. As its name implies, IGBT is a combination of an insulated gate bipolar transistor and a bipolar junction transistor. It combines the advantages of both transistors and has the advantages of both fast switching speed and low driving voltage threshold. The operating principle includes three parts. First, the gate needs to be driven in order to inject electrons into the base and turn it on. The controlled gate injection current must be at least equal to the drive current. Second, the base current must flow through the collector to the emitter and be greater than the holding current; when the base current decreases and falls below the holding current, the transistor is turned off, so that the transistor can be controlled by adjusting the gate injection current. Finally, the collector’s path should go out, and the voltage of the collector should be higher than that of the emitter to turn off the IGBT.

Conclusion

In summary, the IRG5K200HF06B is an IGBT module developed by Infineon for AC motor control, photovoltaic inverters, uninterruptible power supplies, and high-power switches. It has the advantages of fast switching speed and low driving voltage threshold, and is especially suitable for applications in inverters of permanent magnet synchronous motor and line voltage conversion.

The specific data is subject to PDF, and the above content is for reference

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