IRG5U100HF12B Allicdata Electronics
Allicdata Part #:

IRG5U100HF12B-ND

Manufacturer Part#:

IRG5U100HF12B

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOD IGBT 1200V 100A POWIR 62
More Detail: IGBT Module Half Bridge 1200V 180A 780W Chassis M...
DataSheet: IRG5U100HF12B datasheetIRG5U100HF12B Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: --
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 180A
Power - Max: 780W
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Current - Collector Cutoff (Max): 2mA
Input Capacitance (Cies) @ Vce: 12nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: POWIR® 62 Module
Supplier Device Package: POWIR® 62
Description

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IRG5U100HF12B Application Field and Working Principle

An IRG5U100HF12B module is a type of insulated-gate bipolar transistor (IGBT) designed for applications in high-voltage power electronics. This type of IGBT is typically housed within a plastic insulated package that makes it suitable for use in high-power, high-temperature electronic power switching and energy systems. The IRG5U100HF12B module has a three-terminal arrangement, including a gate line that is used to control the operation of the transistor and a pair of collector/emitter terminals that are used to connect the external circuitry.

The internal construction of IRG5U100HF12B modules consists of two semiconductor layers that are connected electrically through an intervening layer of insulation. The semiconductor layers of the device are comprised of a P-type region that serves as the collector and an N-type region that serves as the emitter. A high voltage is typically used to turn on the transistor, which is provided to the gate terminal of the device. This voltage creates an electric field that causes the junction between the P and N regions to be opened and the transistor to conduct current.

The applications of this type of module are generally in areas that require high-power, high-temperature switching, such as in device drivers, AC inverter circuits, and DC-AC conversion. This type of module is particularly suitable for use in high-voltage applications, such as high-power transformers or motor drives, that require highly reliable and robust operation. Additionally, the IRG5U100HF12B module is also suitable for use in high-power converters, such as those found in high-end sound systems, power supplies, and motor control systems.

The primary benefit of the IRG5U100HF12B module is its high power-switching capability, which enables it to be used in applications that require high levels of power density. This module also offers significant energy savings compared to its counterparts, due to its low power-conversion efficiency. Furthermore, the device is designed for use in harsh environments, featuring insulation ratings of up to 1600 VDC, which ensures a high level of protection against accidental contact.

Overall, the IRG5U100HF12B module is an ideal device for use in the power-switching applications mentioned above. Its robust construction and insulation support its ability to operate in high-power, high-temperature environments, while its low power-conversion efficiency enables energy savings. Furthermore, its high-voltage insulation ratings make it an ideal choice for use in high-power transformer or motor drive applications.

The specific data is subject to PDF, and the above content is for reference

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