IRG5K50FF06E Allicdata Electronics
Allicdata Part #:

IRG5K50FF06E-ND

Manufacturer Part#:

IRG5K50FF06E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOD IGBT 600V 50A 6PK POWIR ECO
More Detail: IGBT Module Three Phase Inverter 600V 100A 245W C...
DataSheet: IRG5K50FF06E datasheetIRG5K50FF06E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: --
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 100A
Power - Max: 245W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 3nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: POWIR ECO 2™ Module
Supplier Device Package: POWIR ECO 2™
Description

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An IRG5K50FF06E is a high-powered insulated gate bipolar transistor (IGBT) module. It is one of the many products available in the wide range of power semiconductor modules produced by Infineon Technologies. An IGBT is a type of transistor that combines the advantages of both bjt (Bipolar Junction Transistor) and mosfet (Metal Oxide Semiconductor Field Effect Transistor) technology and is used to control high current, high voltage applications. The IRG5K50FF06E is mainly used for driving motors, high power DC and AC switching, and power supplies.

The IRG5K50FF06E module is a three-phase half bridge switching module. It has two power stages and two control stages. The power stages are made up of two IGBTs with ECAD4004 diodes, and the control stages are made up of two Driver ICs. The module has a volt-second balance detection circuit and a pull-up resistor network, which allows diagnostics and allows the gate currents to be monitored.

The operating temperature range is from -40°C to 125°C. The module is capable of providing high switching frequencies and has low switching and conduction losses, which make it ideal for high-efficiency applications. It has a total gate charge of 12 µC and integrated over-temperature protection. The device can handle continuous current of up to 50A, peak current of 150A, and a maximum junction temperature of 150°C.

The main advantage of IRG5K50FF06E module is that it is capable of providing both high efficiency, as well as safety, because of its built-in protection. The integrated over-temperature protection protects the module from excessive heating, and the volt-second balance detection circuit makes sure that the IGBTs are switching safely. Additionally, the integrated Driver ICs provide precise switching control, which improves system accuracy and efficiency.

In conclusion, the IRG5K50FF06E is a high power, high efficiency IGBT module, designed for driving motors, high power DC and AC switching, and power supplies. It is capable of providing both high efficiency, as well as safety, with its built-in protection. The device has a wide operating temperature range, high switching frequencies, low switching and conduction losses, and good diagnostic features. This makes the IRG5K50FF06E module a great choice for driving high power applications.

The specific data is subject to PDF, and the above content is for reference

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