IRG5W50HF06A Allicdata Electronics
Allicdata Part #:

IRG5W50HF06A-ND

Manufacturer Part#:

IRG5W50HF06A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOD IGBT 600V 50A POWIR 34
More Detail: IGBT Module Half Bridge 600V 75A 260W Chassis Mou...
DataSheet: IRG5W50HF06A datasheetIRG5W50HF06A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: --
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Power - Max: 260W
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 2.6nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: POWIR® 34 Module
Supplier Device Package: POWIR® 34
Description

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The IRG5 series of isolated gate bipolar transistors (IGBTs) from International Rectifier is an innovative series of devices that offer low-power consumption coupled with very high efficiency due to their new design. Among these, the IRG5-50HF06A is a 50A IGBT module with a voltage rating of 600V that is suitable for a variety of applications. In this article, we will discuss the application field and working principle of the IRG5-50HF06A. The IRG5-50HF06A IGBT is primarily used in applications such as industrial motors, solar power inverters, welding machines, UPS systems, and traction power drives. Thanks to its high surge current capability and low switching losses, the IRG5-50HF06A makes it ideal for these light and heavy-duty applications. Due to its 600V voltage rating, the device is able to withstand harsh and drastic changes in the electrical environment, making it perfect for heavy-duty load applications. Additionally, the device is designed with advanced optimization technology that helps to minimize losses and improve system efficiency. The IRG5-50HF06A is a four-pin IGBT module with a simple logic-level gate input. The logic-level gate input allows for positive gate drive currents to be applied which helps to reduce the amount of gate drive power required. Additionally, the device has a wide gate drive voltage range so that it can be used in a variety of applications. The device also comes with a wide temperature range of -40 to +105 degrees Celsius so that it can handle a variety of temperatures. The working principle of the IRG5-50HF06A is based on reverse-biased p-n-n-p structure. The negatively-charged N-type layer acts as a base that turns on the device when positive gate drive current is applied. As positive gate drive current is applied, the P-type layer becomes forward-biased and the IGBT is turned on. The device is then able to direct current in one direction and the voltage from an input source will cause it to activate and turn on. The current is then controlled by the magnitude of the voltage applied to the input. In conclusion, the IRG5-50HF06A is an innovative and reliable IGBT module that is perfect for a variety of power applications. With its robust design, wide temperature range, and logic-level gate input, the device can be used in a variety of applications. Additionally, its reverse-biased p-n-n-p structure allows for current to be directed in one direction when a voltage is applied to its input.

The specific data is subject to PDF, and the above content is for reference

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