IRG5U75HH12E Allicdata Electronics
Allicdata Part #:

IRG5U75HH12E-ND

Manufacturer Part#:

IRG5U75HH12E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOD IGBT 1200V 75A POWIR ECO 2
More Detail: IGBT Module Full Bridge Inverter 1200V 130A 540W ...
DataSheet: IRG5U75HH12E datasheetIRG5U75HH12E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: --
Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 130A
Power - Max: 540W
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 75A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 9.5nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: POWIR ECO 2™ Module
Supplier Device Package: POWIR ECO 2™
Description

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IGBT (Insulated Gate Bipolar Transistor) modules provide a reliable and cost-efficient solution for various power control applications. They are a popular choice among power engineers due to their high current capability, high speed switching, and low voltage drop. IRG5U75HH12E is one of the most popular IGBT modules available in markets today.

The IRG5U75HH12E module is a 1200V IGBT module capable of handling up to 60A DC steady state currents, and can switch up to 75A peak pulses. It is a standard 12mm-module that provides a minimum of 9kV isolation and is compatible with most standard semiconductor mounting and interconnection systems. The wide range of applications for this IGBT module includes motor control, solar applications, inverter systems, and general power conversion applications.

The working principle of the IRG5U75HH12E module is simple. An insulated gate is responsible for controlling the current flowing through the transistor by controlling the voltage applied. When voltage is applied to the gate, a channel is created by the P type and N type semiconductors, allowing the current to flow through the transistor. This increases or decreases the current depending on the polarity of the voltage applied.

The IRG5U75HH12E module also features a fast turn-on, low switching losses, and low thermal resistance. Together, these features allow the module to effectively control the power output for a wide range of applications. Additionally, their high reliability and compatibility with different switching architectures, such as resonant and hard switching, help them to provide even wider applications.

The IRG5U75HH12E module offers great performance and reliability for power control applications. Its fast electrical switching, low switching losses, and high current capability make it a popular choice for solar applications, motor control, and general power conversion applications. With its wide range of applications, low switching losses and high reliability, the IRG5U75HH12E module is a great choice for engineers looking for a reliable and cost-efficient solution.

The specific data is subject to PDF, and the above content is for reference

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